STB820S
Sa mHop Microelectronics C orp.
STP820SGreen
Product
Ver 1.0
N-Channel Logic Level Enhancement Mode Field Eff...
STB820S
Sa mHop Microelectronics C orp.
STP820SGreen
Product
Ver 1.0
N-Channel Logic Level Enhancement Mode Field Effect
Transistor
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Typ
15 @ VGS=10V 75V 54A
18 @ VGS=4.5V
FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package.
D
GS S TB S E R IE S T O -263(DD-P AK )
G D S
S TP S E R IE S TO-220
D
G S
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
Limit
VDS Drain-Source Voltage VGS Gate-Source Voltage
75 ±20
ID
Drain Current-Continuous c
TC=25°C TC=70°C
54 45
IDM -Pulsed a c
159
EAS Single Pulse Avalanche Energy d
121
TC=25°C
PD
Maximum Power Dissipation
TC=70°C
100 70
TJ, TSTG
Operating Junction and Storage Temperature Range
-55 to 175
THERMAL CHARACTERISTICS
R JC R JA
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
1.5 62.5
Units V V A A A mJ W W
°C
°C/W °C/W
Details a...
