Document
STB28N15Green
Product
Sa mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Ver 1.0
PRODUCT SUMMARY
VDSS ID RDS(ON) (mΩ) Max
150V
32A
46 @ VGS=10V 50 @ VGS=4.5V
FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. TO-263 package.
D
GS S TB S E R IE S T O -263(DD-P AK )
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID
Drain Current-Continuous c
TC=25°C TC=100°C
IDM -Pulsed a c
EAS Single Pulse Avalanche Energy d
PD
Maximum Power Dissipation
TC=25°C
TJ, TSTG
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case
R JA
Thermal Resistance, Junction-to-Ambient
Limit 150 ±20 32 22.6 94 216 136
-55 to 175
1.1 55
Units V V A A A mJ W
°C
°C/W °C/W
Details are subject to change without notice.
1
Apr,08,2016
www.samhop.com.tw
STB28N15
Ver 1.0
ELECTRICAL C.