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STB28N15 Dataheets PDF



Part Number STB28N15
Manufacturers SamHop Microelectronics
Logo SamHop Microelectronics
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet STB28N15 DatasheetSTB28N15 Datasheet (PDF)

STB28N15Green Product Sa mHop Microelectronics C orp. N-Channel Logic Level Enhancement Mode Field Effect Transistor Ver 1.0 PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Max 150V 32A 46 @ VGS=10V 50 @ VGS=4.5V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. TO-263 package. D GS S TB S E R IE S T O -263(DD-P AK ) ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous.

  STB28N15   STB28N15


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STB28N15Green Product Sa mHop Microelectronics C orp. N-Channel Logic Level Enhancement Mode Field Effect Transistor Ver 1.0 PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Max 150V 32A 46 @ VGS=10V 50 @ VGS=4.5V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. TO-263 package. D GS S TB S E R IE S T O -263(DD-P AK ) ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous c TC=25°C TC=100°C IDM -Pulsed a c EAS Single Pulse Avalanche Energy d PD Maximum Power Dissipation TC=25°C TJ, TSTG Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case R JA Thermal Resistance, Junction-to-Ambient Limit 150 ±20 32 22.6 94 216 136 -55 to 175 1.1 55 Units V V A A A mJ W °C °C/W °C/W Details are subject to change without notice. 1 Apr,08,2016 www.samhop.com.tw STB28N15 Ver 1.0 ELECTRICAL C.


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