STU30N10
Sa mHop Microelectronics C orp.
STD30N10Green
Product
Ver 2.0
N-Channel Logic Level Enhancement Mode Field E...
STU30N10
Sa mHop Microelectronics C orp.
STD30N10Green
Product
Ver 2.0
N-Channel Logic Level Enhancement Mode Field Effect
Transistor
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Typ
100V 30A 24 @ VGS=10V
FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. TO-252 and TO-251 Package.
G S
STU SERIES TO-252AA(D-PAK)
G DS
STD SERIES TO-251(I-PAK)
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID
Drain Current-Continuous c
TC=25°C TC=70°C
IDM -Pulsed a c
EAS Single Pulse Avalanche Energy d
PD
Maximum Power Dissipation
TC=25°C TC=70°C
TJ, TSTG
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case
R JA
Thermal Resistance, Junction-to-Ambient
Limit 100 ±20 30 24 88 144 52 33 -55 to 150
2.4 50
Units V V A A A mJ W W °C
°C/W °C/W
Details are subject to change without notice.
1
Apr,22,2015
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