STU/D417LGreen
Product
Sa mHop Microelectronics C orp.
P-Channel Logic Level Enhancement Mode Field Effect Transistor
...
STU/D417LGreen
Product
Sa mHop Microelectronics C orp.
P-Channel Logic Level Enhancement Mode Field Effect
Transistor
Ver 1.1
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Max
-40V
-34A
16 @ VGS=-10V 26 @ VGS=-4.5V
FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package.
G S
STU SERIES TO - 252AA( D- PAK )
G DS
STD SERIES TO - 251( I - PAK )
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage ID Drain Current-Continuous
TC=25°C TC=70°C
IDM -Pulsed a
EAS Sigle Pulse Avalanche Energy c
PD
Maximum Power Dissipation
TC=25°C TC=70°C
TJ, TSTG
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case
R JA
Thermal Resistance, Junction-to-Ambient
Limit -40 ±20 -34 -27.2 -103 132 42 27
-55 to 150
3 50
Units V V A A A mJ W W
°C
°C/W °C/W
Details are subject to change without notice.
1
Aug,24,2012...
