Silicon Epitaxial Planar Switching Diode
BAW56W
Silicon Epitaxial Planar Switching Diode
Features • Small package • Low forward voltage • Fast reverse recovery t...
Description
BAW56W
Silicon Epitaxial Planar Switching Diode
Features Small package Low forward voltage Fast reverse recovery time Small total capacitance
Applications Ultra high speed switching application
3
12
Marking Code: YX SOT-323 Plastic Package
Absolute Maximum Ratings (Ta = 25℃)
Parameter
Peak Repetitive Reverse Voltage
Continuous Reverse Voltage Forward Current (DC)
Single Diode Loaded Double Diode Loaded
Repetitive Peak Forward Current
HNon-repetitive Peak Forward Surge Current CPower Dissipation
at t = 1 s at t = 1 ms at t = 1 μs
Operating Junction Temperature
EStorage Temperature Range
Symbol VRRM VR IF IFRM
IFSM
Ptot Tj Tstg
Value
85
75
215 125
450 0.5 1 4 200
150
- 55 to + 150
Unit V V mA mA
A
mW ℃ ℃
TCharacteristics at Ta = 25℃ Parameter MForward Voltage at IF = 1 mA at IF = 10 mA Eat IF= 50 mA at IF = 150 mA SReverse Current
Symbol VF VF VF VF
Max.
715 855
1 1.25
Unit
mV mV V V
at VR = 25 V
IR 30 nA
at VR = 75 V
IR 1 µA
at VR = ...
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