2N5038 Transistor Datasheet

2N5038 Datasheet, PDF, Equivalent


Part Number

2N5038

Description

NPN Transistor

Manufacture

Multicomp

Total Page 3 Pages
Datasheet
Download 2N5038 Datasheet


2N5038
Transistor, NPN
TO-3
Description:
Fast switching speeds and high current capacity ideally suit these parts
for use in switching regulators, inverters, wide-band amplifiers and power
oscillators in industrial and commercial applications
Features:
•  High speed - tf = 0.5μs (Max.)
•  High current - IC (max.) = 30A
•  Low saturation - VCE (sat) = 2.5V (max.) at IC = 20A
•  Pb-free package
Maximum Ratings
Rating
Collector-Emitter Voltage
CoIIector-Base Voltage
CoIIector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
-Peak (Note 2)
Base Current-Continuous
Total Power Dissipation at TC = 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
Symbol
VCEO
VCBO
VCEV
VEBO
IC
ICM
PB
PD
TJ, TStg
Value
90
150
7
20
30
5
140
0.8
-65 to +200
Unit
V DC
A DC
W
W/°C
°C
Thermal Characteristics
Characteristic
Thermal Resistance Junction to Case
Symbol
R
θJC
Max.
1.25
Unit
°C/W
Stresses exceeding maximum ratings may damage the device. Maximum ratings are stress ratings only. Functional operation
above the recommended operating conditions is not implied. Extended exposure to stresses above the recommended operating
conditions may affect device reliability
1. Indicates JEDEC registered data
2. Pulse test: pulse width ≤10ms, duty cycle ≤50%
www.element14.com
www.farnell.com
www.newark.com
Page <1>
18/03/13 V1.0

2N5038
Transistor, NPN
TO-3
Switching Time Test Circuit
Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Off Characteristics
Collector-Emitter Sustaining Voltage (Note 4)
(lC = 200mA DC, lB = 0)
Collector Cut off Current
(VCE = 140V DC, VBE (off) = 1.5V)
(VCE = 100V DC, VBE (off) = 1.5V DC, TC = 150°C)
Emitter Cut off Current
(VEB = 5V DC, IC = 0 )
(VEB = 7V DC, IC = 0 )
On Characteristics (Note 4)
VCEO (sus)
ICEX
IEBO
DC Current Gain
(IC = 12A DC, VCE = 5V DC)
Collector-Emitter Saturation Voltage
(IC = 20A DC, lB = 5A DC)
Base-Emitter Saturation Voltage
(IC = 20A DC, IB = 5A DC)
Dynamic Characteristics
hFE
VCE (sat)
VBE (sat)
Magnitude of Common-Emitter Small-Signal Short-Circuit Forward
Current Transfer Ratio (IC = 2A DC, VCE = 10V DC, f = 5MHz)
Switching Characteristics
hfe
Resistive Load
Rise Time
Storage Time
(VCC = 30V DC)
(IC = 12A DC, IB1 = IB2 = 1.2A DC)
tr
ts
Note:
3. Indicates JEDEC Registered Data.
4. Pulse Test: Pulse Width ≤300μs, Duty Cycle ≤2%
Min.
90
-
-
20
-
-
12
-
-
Max.
-
50
10
5
50
100
2.5
3.3
-
0.5
1.5
Unit
V DC
mA DC
-
V DC
-
µs
www.element14.com
www.farnell.com
www.newark.com
Page <2>
18/03/13 V1.0


Features Transistor, NPN TO-3 Description: Fast switching speeds and high current capac ity ideally suit these parts for use in switching regulators, inverters, wide- band amplifiers and power oscillators i n industrial and commercial application s Features: •  High speed - tf = 0 .5μs (Max.) •  High current - IC ( max.) = 30A •  Low saturation - VCE (sat) = 2.5V (max.) at IC = 20A •  Pb-free package Maximum Ratings Ratin g Collector-Emitter Voltage CoIIector-B ase Voltage CoIIector-Emitter Voltage E mitter-Base Voltage Collector Current- Continuous -Peak (Note 2) Base Current- Continuous Total Power Dissipation at T C = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VCEV VEBO IC ICM PB P D TJ, TStg Value 90 150 7 20 30 5 140 0.8 -65 to +200 Unit V DC A DC W W/°C °C Thermal Characteristics Characte ristic Thermal Resistance Junction to C ase Symbol R θJC Max. 1.25 Unit °C /W Stresses exceeding maximum ratings may damage the device. M.
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