SPB17N80C2

www.DataSheet4U.com Preliminary data SPP17N80C2 SPB17N80C2 Cool MOS™ Power Transistor COOLMOS Feature Power Semiconductors · New revolutionary high voltage technology Product Summary · Worldwide best RDS(on) in TO 220 · Ultra low gate charge VDS 800 V WRDS(on) 290 m · Periodic avalanche rated · Extreme dv/dt rated m· Ultra low effective capacitances o· Improved noise immunity ID P-TO263-3-2 17 A P-TO220-3-1 t4U.cType SPP17N80C2 eSPB17N80C2 Package P-TO220-3-1 P-TO263-3-2 Ordering Code Q67040-S4353 Q67040-S4354 Marking SPP17N80C2 SPB17N80C2 heMaximum Ratings, at Tj = 25 °C, unless otherwise specified SParameter Symbol taContinuous drain current aTC = 25 °C TC = 100 °C ID .DPulsed drain current, tp limited by Tjmax wAvalanche energy, single pulse ID=4A, VDD=50V ID puls EAS wwAvalanche energy, repetitive tAR limited by Tjmax1) EAR Value 17 11 51 670 0.5 Unit A mJ ID=17A, VDD=50V Avalanche current, repetitive tAR limited by Tjmax IAR 17 A Revers...