M58BW016DB M58BW016DT M58BW016FT M58BW016FB
16 Mbit (512 Kbit x 32, boot block, burst) 3 V supply Flash memories
Features
Supply voltage – VDD = 2.7 V to 3.6 V for program, erase
and read – VDDQ = VDDQIN = 2.4 V to 3.6 V for I/O
buffers – VPP = 12 V for fast program (optional) High performance – Access times: 70, 80 ns – 56 MHz effective zero wait-state bur...
