VP05E

"§upertexinc. VP05E Ordering Information BVoss ' BVOGS -450V -500V ROS(ON) (max) 1250 1250 P-Channel Enhancement-Mode Vertical DMOS Power FETs IO(ON) (min) 100mA 100mA T()'39 Order Number' Package T()'92 VP0545N2 VP0545N3 VP0550N2 VP0550N3 DICE VP0545ND VP0550ND Features o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low C,ss and fast switching speeds o Excellent thermal stability o Integral Source-Drain diode o High input impedance and high gain o Complementary N- and P-Channel devices Advanced DMOS Technology These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and negative temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway a...