VP06E

"§upertexinc. VP06E P-Channel Enhancement-Mode Vertical DMOS Power FETs Ordering Information BVoss I BVOGS -450V -500V ROS(ON) (max) 200 200 IO(ON) (min) -0.2A -0.2A TO-39 VP0645N2 VP0650N2 Order Number I Package TO-92 TO-22O VP0645N3 VP0645N5 VP0650N3 VP0650N5 DICE VP0645ND VP0650ND Features o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low CISS and fast switching speeds o Excellent thermal stability o Integral Source-Drain diode o High input impedance and high gain o Complementary N- and P-Channel devices Advanced DMOS Technology These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and negative temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are fre...