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VP0808 VP1008
P-Channel Enhancement-Mode Vertical DMOS Power FETs
Ordering Information
BVoss I BVOGS
-80V -100V
ROSION) (max)
5f.! 5f.!
JOlON) (min)
-UA -1.1A
Features
D Freedom from secondary breakdown D Low power drive requirement D Ease of paralleling D Low CISS and fast switching speeds D Excellent thermal stability D Integral Source-Drain diode D High input impedance and high gain D Complementary N- and P-Channel devices
Order Number I Package
TO-39
TO-92
VP0808B VP1008B
VP0808L VP1008L
Advanced DMOS Technology
These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and negative temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and ther.