VP13A

(J) §upertexinc. VP13A P-Channel Enhancement-Mode Vertical DMOS Power FETs Ordering Information BVoss I BVOGS -40V -60V -100V ROSION} (max) 250 250 250 Features o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low CISS and fast switching speeds o Excellent thermal stability o Integral Source-Drain diode o High input impedance and high gain o Complementary N- and P-Channel devices ID(ON} (min) -O.25A -O.25A -O.25A Order Number I Package TO·39 TO·92 VP1304N2 VP1304N3 VP1306N2 VP1306N3 VP1310N2 VP1310N3 Advanced DMOS Technology These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and negative temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from t...