Quad Array. VN0106N7 Datasheet
(t) §upertex inc. VN01 04N6 / VN0104N7
VN01 06N6 / VN0106N7
'14-pin Side Brazed Ceramic Dip.
Vertical DMOS Power FETs Quad Array
Order Number I Package
o 4 independent channels
o 4 electrically isolated die
o Commercial and Military versions available
o Freedom from secondary breakdown
o Low power drive requirement
o Low CISS and fast switching speeds
o High input impedance and high gain
o Motor control
o Power supply circuits
o Driver (Relays, Hammers, Solenoids, Lamps,
Memories, Displays, Bipolar Transistors, etc.)
10 continuous & lOR (single die)
Advanced DMOS Technology
These enhancement-mode (normally-off) power transistors util-
ize a vertical DMOS structure and Supertex's well-proven silicon-
gate manufacturing process. This combination produces devices
with the power handling capabilities of bipolar transistors and with
the high input impedance and negative temperature coefficient
inherent in MOS devices. Characteristic of all MOS structures,
these devices are free from thermal runaway and thermally-
induced secondary breakdown.
Supertex Vertical DMOS Power FETs are ideally suited to a wide
range of switching and amplifying applications w.here high break-
down voltage, high input impedance, low input capacilance, and
fast switching speeds are desired.
Refer to VN01 A Data Sheet for detailed characteristics.
10 pulsed· & 10RM·
Power Dissipation @ Tc = 25°C*
+ Pulse test 300 ~S pulse. 2% duty cycle.
t Total for pacl<age.