ZENER DIODES. BZX55C5V1 Datasheet

BZX55C5V1 DIODES. Datasheet pdf. Equivalent


Part BZX55C5V1
Description 500mW ZENER DIODES
Feature ZENER DIODE FEATURES ● High reliability APPLICATIONS ● Voltage stabilization CONSTRUCTION ● Silicon .
Manufacture HY
Datasheet
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BZX55C5V1 Datasheet
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BZX55C5V1
ZENER DIODE
FEATURES
High reliability
APPLICATIONS
Voltage stabilization
CONSTRUCTION
Silicon epitaxial planar
BZX55C SERIES
REVERSE VOLTAGE - 2.4 to 188 Volts
DO - 35
1.083(27.5)
MIN
.020
(0.51)
TYP.
.150(3.8)
MAX
.079
(2.0)
MAX
1.083(27.5)
MIN
ABSOLUTE MAXIMUM RATINGS
TJ=25
Parameter
Test Conditions
Power dissipation
I=4mm TL25
Z-current
Junction temperature
Storage temperature range
Type
MAXIMUM THERMAL RESISTANCE
TJ=25
Parameter
Junction ambient
Test Conditions
I=4mm TL=constant
ELECTRICAL CHARACTERISTICS
TJ=25
Parameter
Forward voltage
Test Conditions
IF=200mA
Dimensions in inches and (millimeters)
Symbol
Pv
Iz
Tstg
Value
500
Pv/Vz
175
-55 ~ +200
Unit
Mw
MA
Symbol
RthJA
Value
350
Unit
K/W
Type Symbol Min Typ Max Unit
VF 1.5 V
~ 399 ~



BZX55C5V1
RATING AND CHARACTERISTIC CURVES
BZX55C SERIES
FIG. 1 - THERMAL RESISTANCE VS.LEAD LENGTH
500
400
300
200
100
0
0
5 10 15
LEAD LENGTH (mm)
20
FIG.3 -TYPICAL CHANGE OF WORKING VOLTAGE
UNDER OPERATING CONDITIONS AT Tamb=25°C
1000
TJ=25°C
100
Iz=5mA
10
1
0
5 10 15
Z-VOLTAGE (V)
20
25
FIG.5 - TYPICAL CHANGE OF WORKING VOLTAGE VS.
JUNCTION TEMPERATURE
15
10
5
Iz=5mA
0
-5
0
10 20
30 40 50
Z-VOLTAGE(V)
~ 400 ~
FIG. 2 - TOTAL POWER DISSIPATIONVS.
AMBIENT TEMPERATURE
600
500
400
300
200
100
0
0
40 80 120 160
AMBIENT TEMPERATURE (°C)
200
FIG. 4 - TYPICAL CHANGE OF WORKING VOLTAGE VS.
JUNCTION TEMPERATURE
1.3
VZtn=Vzt/Vz(25°C)
1.2 6x10-4/K
TKyz=10x10-4/K
8x10-4/K
1.1
4x10-4/K
2x10-4/K
1.0 0
-2x10-4/K
0.9 -4x10-4/K
0.8
-60
0 60 120 180
JUNCTION TEMPERATURE (°C)
240
FIG.6 - DIODE CAPACITANCE VS.Z-VOLTAGE
200
150
VR=2V
TJ=25°C
100
50
0
0
0 5 10 15 20 25
Z-VOLTAGE(V)







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