BZX55C15 DIODES Datasheet

BZX55C15 Datasheet, PDF, Equivalent


Part Number

BZX55C15

Description

500mW ZENER DIODES

Manufacture

HY

Total Page 4 Pages
Datasheet
Download BZX55C15 Datasheet


BZX55C15
ZENER DIODE
FEATURES
High reliability
APPLICATIONS
Voltage stabilization
CONSTRUCTION
Silicon epitaxial planar
BZX55C SERIES
REVERSE VOLTAGE - 2.4 to 188 Volts
DO - 35
1.083(27.5)
MIN
.020
(0.51)
TYP.
.150(3.8)
MAX
.079
(2.0)
MAX
1.083(27.5)
MIN
ABSOLUTE MAXIMUM RATINGS
TJ=25
Parameter
Test Conditions
Power dissipation
I=4mm TL25
Z-current
Junction temperature
Storage temperature range
Type
MAXIMUM THERMAL RESISTANCE
TJ=25
Parameter
Junction ambient
Test Conditions
I=4mm TL=constant
ELECTRICAL CHARACTERISTICS
TJ=25
Parameter
Forward voltage
Test Conditions
IF=200mA
Dimensions in inches and (millimeters)
Symbol
Pv
Iz
Tstg
Value
500
Pv/Vz
175
-55 ~ +200
Unit
Mw
MA
Symbol
RthJA
Value
350
Unit
K/W
Type Symbol Min Typ Max Unit
VF 1.5 V
~ 399 ~

BZX55C15
RATING AND CHARACTERISTIC CURVES
BZX55C SERIES
FIG. 1 - THERMAL RESISTANCE VS.LEAD LENGTH
500
400
300
200
100
0
0
5 10 15
LEAD LENGTH (mm)
20
FIG.3 -TYPICAL CHANGE OF WORKING VOLTAGE
UNDER OPERATING CONDITIONS AT Tamb=25°C
1000
TJ=25°C
100
Iz=5mA
10
1
0
5 10 15
Z-VOLTAGE (V)
20
25
FIG.5 - TYPICAL CHANGE OF WORKING VOLTAGE VS.
JUNCTION TEMPERATURE
15
10
5
Iz=5mA
0
-5
0
10 20
30 40 50
Z-VOLTAGE(V)
~ 400 ~
FIG. 2 - TOTAL POWER DISSIPATIONVS.
AMBIENT TEMPERATURE
600
500
400
300
200
100
0
0
40 80 120 160
AMBIENT TEMPERATURE (°C)
200
FIG. 4 - TYPICAL CHANGE OF WORKING VOLTAGE VS.
JUNCTION TEMPERATURE
1.3
VZtn=Vzt/Vz(25°C)
1.2 6x10-4/K
TKyz=10x10-4/K
8x10-4/K
1.1
4x10-4/K
2x10-4/K
1.0 0
-2x10-4/K
0.9 -4x10-4/K
0.8
-60
0 60 120 180
JUNCTION TEMPERATURE (°C)
240
FIG.6 - DIODE CAPACITANCE VS.Z-VOLTAGE
200
150
VR=2V
TJ=25°C
100
50
0
0
0 5 10 15 20 25
Z-VOLTAGE(V)


Features ZENER DIODE FEATURES ● High reliabilit y APPLICATIONS ● Voltage stabilizatio n CONSTRUCTION ● Silicon epitaxial pl anar BZX55C SERIES REVERSE VOLTAGE - 2.4 to 188 Volts DO - 35 1.083(27.5) M IN .020 (0.51) TYP. .150(3.8) MAX . 079 (2.0) MAX 1.083(27.5) MIN ABSOLU TE MAXIMUM RATINGS TJ=25℃ Parameter Test Conditions Power dissipation I =4mm TL≤25℃ Z-current Junction te mperature Storage temperature range T ype MAXIMUM THERMAL RESISTANCE TJ=25 Parameter Junction ambient Test Cond itions I=4mm TL=constant ELECTRICAL CH ARACTERISTICS TJ=25℃ Parameter Forwar d voltage Test Conditions IF=200mA Di mensions in inches and (millimeters) S ymbol Pv Iz Tstg Value 500 Pv/Vz 175 -55 ~ +200 Unit Mw MA ℃ ℃ Symbo l RthJA Value 350 Unit K/W Type Symb ol Min Typ Max Unit VF 1.5 V ~ 399 ~ RATING AND CHARACTERISTIC CURVES BZX55C SERIES THERM.RESIST.JUNCTION / AMBIEN T(K/M) FIG. 1 - THERMAL RESISTANCE VS. LEAD LENGTH 500 400 300 200 100 0 0 5 10 15 LEAD LENGTH (mm).
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