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SC8611S

SamHop

Dual N-Channel Enhancement Mode Field Effect Transistor

SC8611SGreen Product Sa mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor Ver 2.0 ...


SamHop

SC8611S

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SC8611SGreen Product Sa mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor Ver 2.0 PRODUCT SUMMARY VSSS IS RSS(ON) (mΩ) Typ 2.4 @ VGS=4.5V 2.5 @ VGS=4.0V 12V 11A 2.6 @ VGS=3.8V 3.3 @ VGS=3.1V 4.0 @ VGS=2.5V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Wafer level CSP. ESD Protected. WLCSP TOP VIEW BOTTOM VIEW 1.77 4x 0.25 0.03 3.54 8611S Date Code 1.25 0.03 43 52 61 Mark area 1-pin index mark S1 3 2x φ 0.25 0.03 2 1 0.10 0.01 4 5 6 0.25 0.5 ABSOLUTE MAXIMUM RATINGS (TA=25°C) Symbol Parameter Limit VSSS Source-Source Voltage 12 VGSS IS ISP Gate-Source Voltage Source Current-Continuous c -Pulsed a c ±8 11 110 PT Total Power Dissipation 2.5 TJ, TSTG Operating Junction and Storage Temperature Range -55 to 150 Units V V A A W °C Details are subject to change without notice. 1 1.00 1.00 LAND PATTERN (REFERENCE) PACKAGE OUTLINE 0.50 PITCH 4X 1.25 2.00 PITCH 2X 0....




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