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SC8270S Dataheets PDF



Part Number SC8270S
Manufacturers SamHop
Logo SamHop
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Datasheet SC8270S DatasheetSC8270S Datasheet (PDF)

SC8270SGreen Product Sa mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor Preliminary PRODUCT SUMMARY VSSS IS RSS(ON) (mΩ) Max 10.2 @ VGS=4.5V 10.5 @ VGS=4.0V 24V 9A 11.5 @ VGS=3.8V 12.0 @ VGS=3.1V 14.0 @ VGS=2.5V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Wafer level CSP. ESD Protected. WLCSP TOP VIEW 1.61 0.03 BOTTOM VIEW 0.65 LAND PATTERN (REFERENCE) 0.65 2.55 0.03 8270S Date Code S1 S2 G1 G2 S1 S2 0.65 0..

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SC8270SGreen Product Sa mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor Preliminary PRODUCT SUMMARY VSSS IS RSS(ON) (mΩ) Max 10.2 @ VGS=4.5V 10.5 @ VGS=4.0V 24V 9A 11.5 @ VGS=3.8V 12.0 @ VGS=3.1V 14.0 @ VGS=2.5V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Wafer level CSP. ESD Protected. WLCSP TOP VIEW 1.61 0.03 BOTTOM VIEW 0.65 LAND PATTERN (REFERENCE) 0.65 2.55 0.03 8270S Date Code S1 S2 G1 G2 S1 S2 0.65 0.65 0.65 0.65 1-pin index mark S1 0.11 0.01 S1: Source 1 G1: Gate 1 G2: Gate 2 S2: Source 2 6 - φ 0.31 φ 0.31 Unit : mm ABSOLUTE MAXIMUM RATINGS (TA=25°C) Symbol Parameter Limit VSSS Source-Source Voltage 24 VGSS IS ISP Gate-Source Voltage Source Current-Continuous a -Pulsed b ±12 9 90 PT Total Power Dissipation a 1.3 TJ, TSTG Operating Junction and Storage Temperature Range -55 to 150 Units V V A A W °C FET1 Gate 1 FET2 Gate 2 Gate Protect Diode Source 1 .


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