SC8260SGreen
Product
Sa mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor
Ver 1.0
...
SC8260SGreen
Product
Sa mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect
Transistor
Ver 1.0
PRODUCT SUMMARY
VSSS
IS RSS(ON) (mΩ) Max
10.5 @ VGS=4.5V
10.8 @ VGS=4.0V
20V 8A 11.8 @ VGS=3.8V
13.5 @ VGS=3.1V
16.0 @ VGS=2.5V
FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Wafer level CSP. ESD Protected.
WLCSP
TOP VIEW
1.61 0.03
BOTTOM VIEW
0.65
LAND PATTERN (REFERENCE)
0.65
S1 S2 G1 G2 S1 S2
0.65 0.65
0.65 0.65
2.55 0.03
8260S Date Code
Mark area 1-pin index mark S1 0.13 0.03
S1: Source 1 G1: Gate 1 G2: Gate 2 S2: Source 2
6 - φ 0.31
φ 0.31
Unit : mm
ABSOLUTE MAXIMUM RATINGS (TA=25°C)
Symbol Parameter
Limit
VSSS
Source-Source Voltage
20
VGSS IS ISP
Gate-Source Voltage Source Current-Continuous a
-Pulsed b
±12 8 80
PT Total Power Dissipation a
1.3
TJ, TSTG
Operating Junction and Storage Temperature Range
-55 to 150
Units V V A A W
°C
FET1 Gate 1
FET2 Gate 2
Gate Protect Diode
Sour...
