SC8180SGreen
Product
Sa mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor
Ver 1.1
...
SC8180SGreen
Product
Sa mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect
Transistor
Ver 1.1
PRODUCT SUMMARY
VSSS
IS RSS(ON) (mΩ) Typ
7.9 @ VGS=4.5V
8.3 @ VGS=4.0V
12V
5.5A
8.5 @ VGS=3.8V
9.7 @ VGS=3.1V
11.9 @ VGS=2.5V
FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Wafer level CSP. ESD Protected.
WLCSP
TOP VIEW 1.88 0.03
8180S
Date Code
1.88 0.03
BOTTOM VIEW 0.65
G2 S2 G1 S1
0.65
1-pin index mark S1
Mark area
0.100 0.010
4 - φ 0.31
S1: Source 1 G1: Gate 1 G2: Gate 2 S2: Source 2
Unit : mm
ABSOLUTE MAXIMUM RATINGS (TA=25°C)
Symbol Parameter
Limit
VSSS
Source-Source Voltage
12
VGSS IS ISP
Gate-Source Voltage Source Current-Continuous c
-Pulsed a c
±8 5.5 55
PT Total Power Dissipation
1.6
TJ, TSTG
Operating Junction and Storage Temperature Range
-55 to 150
Units V V A A W
°C
FET1 Gate 1
FET2 Gate 2
Gate Protect Diode
Source 1
Body Diode
Source 2
Details are subject to change...
