MT49H8M32

256Mb: x16, x32 2.5V VEXT, 1.8V VDD, 1.8V VDDQ, RLDRAM Features Reduced Latency DRAM (RLDRAM®) MT49H8M32 – 1 Meg x 32 x 8 Banks MT49H16M16 – 2 Meg x 16 x 8 Banks For the latest data sheet, refer to Micron’s Web site: www.micron.com/products/dram/rldram/ Features Organization: 8 Meg x 32, 16 Meg x 16 in 8 banks Cyclic bank addressing for maximum data bandwidth Non multiplexed addresses Non interruptible sequential burst of two (2-bit prefetch) and four (4-bit prefetch) DDR Up to 600 Mb/sec/pin data rate Programmable READ latency (RL) of 5-6 Data valid signal (DVLD) activated as read data is available Data mask signals (DM0/DM1) to mask first and second part of write data burst IEEE 1149.1 compliant JTAG boundary scan 2.5V VEXT, 1.8V VDD, 1.8V VDDQ I/O Pseudo-HSTL 1.8V I/O Supply Internal auto precharge Refresh requirements: 32ms at 95°C case temperature (8K refresh for each bank, 64K refresh command must be issued in tota...