Quadrants Triacs. AIS4C60 Datasheet

AIS4C60 Triacs. Datasheet pdf. Equivalent

AIS4C60 Datasheet
Recommendation AIS4C60 Datasheet
Part AIS4C60
Description 3 Quadrants Triacs
Feature AIS4C60;   ADV                                                                          AIS4C60/80 3 Quadrant.
Manufacture ADV
Datasheet
Download AIS4C60 Datasheet




ADV AIS4C60
 
ADV 
                                                                        AIS4C60/80
3 Quadrants Triacs
General Description
High current density due to mesa technology . the AIS4C triac
series is suitable for general purpose AC switching. They can be
used as an ON/OFF function in applications such as static relays,
heating regulation, Rectifier-fed DC inductive loads e.g.DC motors
and solenoids , motor speed controllers.
2.T2
3.Gate
1.T1
Features
Repetitive Peak Off-State Voltage: 600Vand800V
R.M.S On-State Current ( IT(RMS)= 4A )
High Commutation dv/dt
These Devices are Pb-Free and are RoHS Compliant
Isolated heatsink mounted , Isolation Voltage ( VISO = 2500V AC )
123
TO-220 Isolated
Absolute Maximum Ratings
Symbol
VDRM
VRRM
IT(RMS)
ITSM
I2t
dI/dt
IGM
PG(AV)
PGM
Tj
TSTG
Items
Repetitive Peak Off-State Voltage Tj = 25°C
R.M.S On-State Current
TC = 105°C
Conditions
AIS4C60
AIS4C80
Surge On-State Current
tp=20ms(50Hz)/tp=16.7ms(60Hz)
I2t for fusing
tp=10ms
Critical rate of rise of on-state
current
Peak Gate Current
F = 120 Hz Tj = 125°C
IG = 2 x IGT , tr 100 ns
tp = 20 μs Tj = 125°C
Average Gate Power Dissipation(Tj=125°C)
Peak Gate Power Dissipation(tp=20us,Tj=125°C)
Operating Junction Temperature
Storage Temperature
Ratings
600
800
4
25/27
3.1
50
2
0.5
5
- 40 ~ 125
- 40 ~ 150
Unit
V
V
A
A
A2s
A/μs
A
W
W
°C
°C
 
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ADV
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ADV AIS4C60
 
ADV 
                                                                        AIS4C60/80
Electrical Characteristics ( Tj = 25°C unless otherwise specified )
Symbol
Items
Conditions
AIS4C60/80
Unit
IDRM Peak Forward Reverse Blocking
IRRM
Current
VTM Peak On-State Voltage
VDRM = VRRM, Tj = 25°C
VDRM = VRRM, Tj = 125°C
ITM = 5 A, tp = 380 μs
Max.
Max.
T
S Blank
5
1
1.7
B
uA
mA
V
VGD
Q1-Q2-Q3
NonTrigger Gate
Voltage
VD = VDRM RL = 3.3 k
Tj = 125°C
Min.
0.2
V
VGT Q1-Q2-Q3 Gate Trigger Voltage
Max.
1.3
V
VD = 12V RL = 33
IGT Q1-Q2-Q3 Gate Trigger Current
Max. 5
10 35 50 mA
IH
Q1-Q2-Q3
Holding Current
IT = 0.1A
Max. 10 15 40 60 mA
Q1-Q3
IL Latching Current
Q2
IG = 1.2 IGT
10 25 50 70
Max.
mA
15 30 70 80
dV/dt
Critical Rate of Rise of Off-State
Voltage
VD = 2/3VDRM gate open
Tj = 125°C
Min.
20
40 400 1000 V/μs
(dV/dt)c
Rate of Change of Commutating
Current,
(dI/dt)c=-1.7A/ms
Tj = 125°C
Min. 0.5 1 10 25 V/μs
Rth(j-c)
Rth(j-a)
Junction to case (AC)
Junction to ambient
Max. 4.0 °C/W
Max. 60 °C/W
FIG.1:Triac quadrant are defined and the gate trigger test circuit
T2+
Q2(T2+G-)
RL
Q1(T2+G+)
RL
VD VD
A
V
RG
A
V
RG
G-
RL
G+
VD
A
V
RG
Q3(T2-G-)
T2-
 
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ADV AIS4C60
 
ADV 
                                                                        AIS4C60/80
FIG.2: Maximum on-state power dissipation
5
4
3
2
360° Full Cycle
1
0 1234 5
Power Dissipation(W)
FIG.4: Maximum transient thermal impedance
105
FIG.3: Typical RMS on-state current VS
Allowable case Temperature
150
120
90
60
360° Full Cycle
30
0
0
FIG.5:
1234
R.M.S On-state Current(A)
Rated surge on-state
( Non-Repetitive)
102
5
current
f=60Hz
10 f=50Hz
104
103
102
101
0.1 1
10
Rth(j-c)(°C/W),Transient Thermal Impedance
Tj=25°C Max
1
0 5 10 15 20 25 30 35 40
ITSM(A),Surge On-State Current
FIG.6: Gate trigger current VS Junction
temperature
150
125
100
75
50
25
0
-25
-50
0
50 100 150 200
IGT(Tj)/IGT(25°C) x 100(%)
250
 
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