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FST20020 Dataheets PDF



Part Number FST20020
Manufacturers GeneSiC
Logo GeneSiC
Description Silicon Power Schottky Diode
Datasheet FST20020 DatasheetFST20020 Datasheet (PDF)

Silicon Power Schottky Diode Features • High Surge Capability • Types up to 45 V VRRM • Isolated to Plate FST20020 thru FST20045 VRRM = 20 V - 45 V IF = 200 A TO-249AB Package Maximum ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions FST20020 Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature VRRM VRMS VDC IF IF,SM Tj .

  FST20020   FST20020


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Silicon Power Schottky Diode Features • High Surge Capability • Types up to 45 V VRRM • Isolated to Plate FST20020 thru FST20045 VRRM = 20 V - 45 V IF = 200 A TO-249AB Package Maximum ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions FST20020 Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature VRRM VRMS VDC IF IF,SM Tj Tstg TC ≤ 126 °C TC = 25 °C, tp = 8.3 ms 20 14 20 200 1500 -40 to 175 -40 to 175 FST20035 35 25 35 200 1500 -40 to 175 -40 to 175 FST20040 40 28 40 200 1500 -40 to 175 -40 to 175 FST20045 45 32 45 200 1500 -40 to 175 -40 to 175 Unit V V V A A °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Diode forward voltage Reverse current Symbol VF IR Thermal characteristics Thermal resistance, junction case RthJC Conditions IF = 100 A, Tj = 25.


FST2045 FST20020 FST20035


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