Silicon Power Schottky Diode
Features • High Surge Capability • Types up to 45 V VRRM • Isolated to Plate
FST20020 thru...
Silicon Power
Schottky Diode
Features High Surge Capability Types up to 45 V VRRM Isolated to Plate
FST20020 thru FST20045
VRRM = 20 V - 45 V IF = 200 A
TO-249AB Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
FST20020
Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current
Surge non-repetitive forward current, Half Sine Wave
Operating temperature Storage temperature
VRRM VRMS VDC
IF
IF,SM
Tj Tstg
TC ≤ 126 °C TC = 25 °C, tp = 8.3 ms
20 14 20 200
1500
-40 to 175 -40 to 175
FST20035
35 25 35 200
1500
-40 to 175 -40 to 175
FST20040
40 28 40 200
1500
-40 to 175 -40 to 175
FST20045
45 32 45 200
1500
-40 to 175 -40 to 175
Unit
V V V A
A
°C °C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Diode forward voltage Reverse current
Symbol VF IR
Thermal characteristics Thermal resistance, junction case
RthJC
Conditions
IF = 100 A, Tj = 25...