POWER MOSFET
IRF4N60
POWER MOSFET
GENERAL DESCRIPTION
FEATURES
This advanced high voltage MOSFET is designed to withstand high ene...
Description
IRF4N60
POWER MOSFET
GENERAL DESCRIPTION
FEATURES
This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits.
Higher Current Rating Lower Rds(on) Lower Capacitances Lower Total Gate Charge Tighter VSD Specifications Avalanche Energy Specified
PIN CONFIGURATION
TO-220/TO-220FP Top View
SYMBOL
D
GATE DRAIN SOURCE
G
12 3
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
Rating Drain to Current Ё Continuous
Ё Pulsed Gate-to-Source Voltage Ё Continue
Ё Non-repetitive Total Power Dissipation
TO-220 TO-220FP Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy Ё TJ = 25к (VDD = 100V, VGS = 10V, IL = 4A, L = 10mH, RG = 25ȍ) Thermal Resistance Ё Jun...
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