Document
BRG10N120D
Rev.D Oct.-2015
DATA SHEET
/ Descriptions TO-3P 。Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package.
/ Features
,,,。 Built in fast recovery diode, High reliability and thermal stability parameters, Low switching loss, Low saturation voltage.
/ Applications
。 Eddy-current heating.
/ Equivalent Circuit
/ Pinning
1 2 3
PIN1:Gate
PIN 2:Collector
PIN 3:Emitter
/ hFE Classifications & Marking 。See Marking Instructions.
http://www.fsbrec.com
1/6
BRG10N120D
Rev.D Oct.-2015
/ Absolute Maximum Ratings(Ta=25℃)
Parameter Collector-emitter voltage
Gate-emitter voltage
Collector current@TC=25℃
Collector current@TC=100℃ Collector peak current, TP limited by TJMAX Diode forward current
Diode forward c.