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1N5819

Fairchild Semiconductor

Schottky Barrier Rectifier

1N5817 - 1N5819 — Schottky Barrier Rectifier November 2010 1N5817 - 1N5819 Schottky Barrier Rectifier Features • 1.0 am...


Fairchild Semiconductor

1N5819

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Description
1N5817 - 1N5819 — Schottky Barrier Rectifier November 2010 1N5817 - 1N5819 Schottky Barrier Rectifier Features 1.0 ampere operation at TA = 90°C with no thermal runaway. For use in low voltage, high frequency inverters free wheeling, and polarity protection applications. DO-41 plastic case COLOR BAND DENOTES CATHODE Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units 1N5817 1N5818 1N5819 VRRM Maximum Repetitive Reverse Voltage 20 30 40 IF(AV) Average Rectified Forward Current .375” lead length @ TA = 90°C 1.0 IFSM Non-repetitive Peak Surge Current 8.3 ms Single Half-Sine Wave 25 V A A TJ, TSTG Operating Junction and Storage Temperature -65 to +125 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics Symbol Parameter PD Power Dissipation RθJA Maximum Thermal Resistance, Junction to Ambient RθJC Maximum Thermal Resistance, J...




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