1N5817

1N5817 – 1N5819 Taiwan Semiconductor 1A, 20V - 40V Schottky Barrier Rectifier FEATURES ● AEC-Q101 qualified available ● Low forward voltage drop ● Guard ring for overvoltage protection ● High surge current capability ● RoHS Compliant ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● Switching mode power supply (SMPS) ● Adapters ● DC to DC converter KEY PARAMETERS PARAMETER VALUE UNIT IF 1 A VRRM 20 - 40 V IFSM 30 A TJ MAX 125 °C Package DO-204AL (DO-41) Configuration Single die MECHANICAL DATA ● Case: DO-204AL (DO-41) ● Molding compound meets UL 94V-0 flammability rating ● Terminal: Pure tin plated leads, solderable per J-STD-002 ● Meet JESD 201 class 2 whisker test ● Polarity: Indicated by cathode band ● Weight: 0.330g (approximately) DO-204AL (DO-41) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL 1N5817 Marking code on the device 1N5817 Repetitive peak reverse voltage VRRM 20 Reverse voltage, total rms value VR(RMS) 14 Forward current Surge peak forward current, 8.3ms single half sine wave superimposed on rated load Critical rate of rise of off-state voltage IF IFSM dv/dt Junction temperature Storage temperature TJ TSTG 1N5818 1N5818 30 21 1 30 10,000 -55 to +125 -55 to +125 1N5819 1N5819 40 28 UNIT V V A A V/µ s °C °C 1 Version: H2104 1N5817 – 1N5819 Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER Junction-to-ambient thermal resistance Junction-to-case thermal resistance SYMBOL RӨJA RӨJC ...