SMD Type
Schottky Barrier Rectifier Diodes 1N5817-1N5819
Diodes
Features
For Surface Mounted Applications Metal Silico...
SMD Type
Schottky Barrier Rectifier Diodes 1N5817-1N5819
Diodes
Features
For Surface Mounted Applications Metal Silicon Junction, Majority Carrier Conduction Low Power Loss, High Efficiency High Forward Surge Current Capability
DO-214AC(SMA)
1.575 1.397
2
4.597 3.988
2.896 1.67 1 2.489 1.47
Unit: mm 3.93 3.73
5.283 4.775
2.438 1.981
2.38 2.18 5.49 5.29
Recommended Land Pattern
1.524 0.762
0.203 0.051
0.305 0.152
Maximum Ratings and Electrical Characteristics @ Ta = 25
Parameter
Maximum Repetitive Peak Reverse Voltage Maximum RMS voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current
Symbol
VRRM VRMS VDC I(AV)
1N5817 20 14 20
Rating 1N5818
30 21 30 1.0
1N5819 40 28 40
Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method)
IFSM
40
Maximum InstantaneousForward Voltage at 1.0A Maximum DC Reverse Current TA=25 At Rated DC Blocking Voltage TA=100 Typical Junction Capacitance *1 Typical Thermal Resistance ...
