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BR93LC66F Dataheets PDF



Part Number BR93LC66F
Manufacturers Rohm
Logo Rohm
Description 4/096-Bit Serial Electrically Erasable PROM
Datasheet BR93LC66F DatasheetBR93LC66F Datasheet (PDF)

Memory ICs 4,096-Bit Serial Electrically Erasable PROM BR93LC66 / BR93LC66F / BR93LC66RF / BR93LC66FV Features • • Low power CMOS Technology • 256 × 16 bit configuration • 2.7V to 5.5V operation • Low power dissipation – 3mA (max.) active current: 5V – 5µA (max.) standby current: 5V • Auto increment for efficient data bump • Automatic erase-before-write • Hardware and software write protection – Default to write-disable state at power up – Software instructions for write-enable / disable – Vcc .

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Memory ICs 4,096-Bit Serial Electrically Erasable PROM BR93LC66 / BR93LC66F / BR93LC66RF / BR93LC66FV Features • • Low power CMOS Technology • 256 × 16 bit configuration • 2.7V to 5.5V operation • Low power dissipation – 3mA (max.) active current: 5V – 5µA (max.) standby current: 5V • Auto increment for efficient data bump • Automatic erase-before-write • Hardware and software write protection – Default to write-disable state at power up – Software instructions for write-enable / disable – Vcc lockout inadvertent write protection • 8-pin SOP / 8-pin SSOP-B / 8-pin DIP packages • Device status signal during write cycle • TTL compatible Input / Output • 100,000 ERASE / write cycles • 10 years Data Retention •Pin assignments CS SK DI 1 2 3 8 7 6 5 VCC N.C. N.C. GND NC 1 VCC 2 CS 3 SK 4 8 7 N.C. GND DO DI BR93LC66 / BR93LC66RF BR93LC66F / BR93LC66FV 6 5 DO 4 •Pin descriptions Pin Name CS SK DI DO GND N.C. N.C. VCC Chip select input Serial clock input Start bit, operating code, address, and serial data input Serial data output, READY / BUSY internal status display output Ground Not connected Not connected Power supply Function Overview • The BR93LC66 series are CMOS serial input / output-type memory circuits (EEPROMs) that can be programmed electrically. Each is configured of 256 words × 16 bits (4096 bits), and each word can be accessed individually and data read from it and written to it. Operation control is performed using five types of commands. The commands, addresses, and data are input through the DI pin under the control of the CS and SK pins. In a write operation, the internal status signal (READY or BUSY) can be output from the DO pin. 1 Memory ICs BR93LC66 / BR93LC66F / BR93LC66RF / BR93LC66FV •Block diagram Power supply CS Command code voltage detector Control High voltage Write disable generator SK Clock generation Address Command Address 8bit buffer decoder DI 8bit 4096bit register Data R/W EEPROM array 16bit 16bit register amplifier DO Dummy bit •Absolute maximum ratings (Ta = 25°C) Parameter Applied voltage BR93LC66 Power dissipation BR93LC66F / RF BR93LC66FV Storage temperature Operating temperature Terminal voltage Symbol VCC Limits – 0.3 ~ + 6.5 500∗1 Pd 350∗2 300∗3 Tstg Topr — – 65 ~ + 125 – 40 ~ + 85 – 0.3 ~ VCC + 0.3 °C °C V mW Unit V ∗1 Reduced by 5.0mW for each increase in Ta of 1°C over 25°C. ∗2 Reduced by 3.5mW for each increase in Ta of 1°C over 25°C. ∗3 Reduced by 3.0mW for each increase in Ta of 1°C over 25°C. •Recommended operating conditions (Ta = 25°C) Parameter Power supply voltage Input voltage Writing Reading Symbol VCC VIN Min. 2.7 2.0 0 Typ. — — — Max. 5.5 5.5 VCC Unit V V V 2 Memory ICs BR93LC66 / BR93LC66F / BR93LC66RF / BR93LC66FV CC •Electrical characteristics (unless otherwise noted, Ta = – 40 to 85°C, V Parameter Input low level voltage Input high level voltage Output low level voltage 1 Output high level voltage 1 Output low level voltage 2 Output high level voltage 2 Input leakage current Output leakage current Operating current dissipation 1 Operating current dissipation 2 Standby current Symbol VIL VIH VOL1 VOH1 VOL2 VOH2 ILI ILO ICC1 ICC2 ISB Min. – 0.3 2.0 — 2.4 — Typ. — Max. 0.8 Unit V V V V V V µA µA mA mA µA — VCC + 0.3 — — — 0.4 — 0.2 — 1.0 1.0 3 1.5 5 = 5V ± 10%) Conditions — — IOL = 2.1mA IOH = – 0.4mA IOL = 10µA IOH = – 10µA VIN = 0V ~ VCC VOUT = 0V ~ VCC, CS = GND VIN = VIH / VIL, DO = OPEN, fsk = 1MHz, WRITE VIN = VIH / VIL, DO = OPEN, fsk = 1MHz, READ CS = SK = DI = GND, DO = OPEN VCC – 0.4 — – 1.0 – 1.0 — — — — — 1.5 0.7 1.0 (unless otherwise noted, Ta = – 40 to 85°C, VCC = 3V ± 10%) Parameter Input low level voltage Input high level voltage Output low level voltage Output high level voltage Input leakage current Output leakage current Operating current dissipation 1 Operating current dissipation 2 Standby current Symbol VIL VIH VOL VOH ILI ILO ICC1 ICC2 ISB Min. – 0.3 Typ. Max. Unit V V V V IOL = 10µA IOH = – 10µA Conditions — — — 0.15 × VCC VCC + 0.3 0.2 — 1.0 1.0 2 1 3 0.7 × VCC — — — VCC – 0.4 — – 1.0 – 1.0 — — — — — 0.5 0.2 0.4 µA VIN = 0V ~ VCC µA VOUT = 0V ~ VCC, CS = GND mA VIN = VIH / VIL, DO = OPEN, fsk = 250kHz, WRITE mA VIN = VIH / VIL, DO = OPEN, fsk = 250kHz, READ µA CS = SK = DI = GND, DO = OPEN •Electrical characteristics (unless otherwise noted, Ta = – 40 to 85°C, V Parameter Input low level voltage Input high level voltage Output low level voltage Output high level voltage Input leakage current Output leakage current Operating current dissipation 2 Standby current Symbol VIL VIH VOL VOH ILI ILO ICC2 ISB Min. – 0.3 Typ. Max. Unit V V V V µA µA mA µA — 0.15 × VCC 0.7 × VCC — VCC + 0.3 — — 0.2 — 1.0 1.0 1 3 CC = 2.0V) Conditions — — IOL = 10µA IOH = – 10µA VIN = 0V ~ VCC VOUT = 0V ~ VCC, CS = 0V VIN = VIH / VIL, DO = OPEN, fsk = 200kHz, READ CS = SK = DI = 0V, DO = OPEN VCC – 0.4 — – 1.0 – 1.0 — — — — 0.2 0.4 3 Memory ICs Circuit operation • (1) Command mode BR93LC66 / BR93LC66F / BR93LC.


BR93LC66 BR93LC66F BR93LC66FV


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