Document
Memory ICs
4,096-Bit Serial Electrically Erasable PROM
BR93LC66 / BR93LC66F / BR93LC66RF / BR93LC66FV
Features • • Low power CMOS Technology • 256 × 16 bit configuration • 2.7V to 5.5V operation • Low power dissipation – 3mA (max.) active current: 5V – 5µA (max.) standby current: 5V • Auto increment for efficient data bump • Automatic erase-before-write • Hardware and software write protection – Default to write-disable state at power up – Software instructions for write-enable / disable – Vcc lockout inadvertent write protection • 8-pin SOP / 8-pin SSOP-B / 8-pin DIP packages • Device status signal during write cycle • TTL compatible Input / Output • 100,000 ERASE / write cycles • 10 years Data Retention
•Pin assignments
CS SK DI 1 2 3 8 7 6 5 VCC N.C. N.C. GND NC 1 VCC 2 CS 3 SK 4 8 7 N.C. GND DO DI
BR93LC66 / BR93LC66RF
BR93LC66F / BR93LC66FV
6 5
DO 4
•Pin descriptions
Pin Name CS SK DI DO GND N.C. N.C. VCC Chip select input Serial clock input Start bit, operating code, address, and serial data input Serial data output, READY / BUSY internal status display output Ground Not connected Not connected Power supply Function
Overview • The BR93LC66 series are CMOS serial input / output-type memory circuits (EEPROMs) that can be programmed electrically. Each is configured of 256 words × 16 bits (4096 bits), and each word can be accessed individually and data read from it and written to it. Operation control is performed using five types of commands. The commands, addresses, and data are input through the DI pin under the control of the CS and SK pins. In a write operation, the internal status signal (READY or BUSY) can be output from the DO pin.
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Memory ICs
BR93LC66 / BR93LC66F / BR93LC66RF / BR93LC66FV
•Block diagram
Power supply
CS
Command code
voltage detector
Control High voltage Write disable generator
SK
Clock generation
Address Command
Address
8bit
buffer decoder
DI
8bit 4096bit
register Data R/W
EEPROM array 16bit
16bit
register amplifier
DO
Dummy bit
•Absolute maximum ratings (Ta = 25°C)
Parameter Applied voltage BR93LC66 Power dissipation BR93LC66F / RF BR93LC66FV Storage temperature Operating temperature Terminal voltage Symbol VCC Limits – 0.3 ~ + 6.5 500∗1 Pd 350∗2 300∗3 Tstg Topr — – 65 ~ + 125 – 40 ~ + 85 – 0.3 ~ VCC + 0.3 °C °C V mW Unit V
∗1 Reduced by 5.0mW for each increase in Ta of 1°C over 25°C. ∗2 Reduced by 3.5mW for each increase in Ta of 1°C over 25°C. ∗3 Reduced by 3.0mW for each increase in Ta of 1°C over 25°C.
•Recommended operating conditions (Ta = 25°C)
Parameter Power supply voltage Input voltage Writing Reading Symbol VCC VIN Min. 2.7 2.0 0 Typ. — — — Max. 5.5 5.5 VCC Unit V V V
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Memory ICs
BR93LC66 / BR93LC66F / BR93LC66RF / BR93LC66FV
CC
•Electrical characteristics (unless otherwise noted, Ta = – 40 to 85°C, V
Parameter Input low level voltage Input high level voltage Output low level voltage 1 Output high level voltage 1 Output low level voltage 2 Output high level voltage 2 Input leakage current Output leakage current Operating current dissipation 1 Operating current dissipation 2 Standby current Symbol VIL VIH VOL1 VOH1 VOL2 VOH2 ILI ILO ICC1 ICC2 ISB Min. – 0.3 2.0 — 2.4 — Typ. — Max. 0.8 Unit V V V V V V µA µA mA mA µA — VCC + 0.3 — — — 0.4 — 0.2 — 1.0 1.0 3 1.5 5
= 5V ± 10%)
Conditions — —
IOL = 2.1mA IOH = – 0.4mA IOL = 10µA IOH = – 10µA VIN = 0V ~ VCC VOUT = 0V ~ VCC, CS = GND VIN = VIH / VIL, DO = OPEN, fsk = 1MHz, WRITE VIN = VIH / VIL, DO = OPEN, fsk = 1MHz, READ CS = SK = DI = GND, DO = OPEN
VCC – 0.4 — – 1.0 – 1.0 — — — — — 1.5 0.7 1.0
(unless otherwise noted, Ta = – 40 to 85°C, VCC = 3V ± 10%)
Parameter Input low level voltage Input high level voltage Output low level voltage Output high level voltage Input leakage current Output leakage current Operating current dissipation 1 Operating current dissipation 2 Standby current Symbol VIL VIH VOL VOH ILI ILO ICC1 ICC2 ISB Min. – 0.3 Typ. Max. Unit V V V V IOL = 10µA IOH = – 10µA Conditions — —
— 0.15 × VCC VCC + 0.3 0.2 — 1.0 1.0 2 1 3
0.7 × VCC — — —
VCC – 0.4 — – 1.0 – 1.0 — — — — — 0.5 0.2 0.4
µA VIN = 0V ~ VCC µA VOUT = 0V ~ VCC, CS = GND mA VIN = VIH / VIL, DO = OPEN, fsk = 250kHz, WRITE mA VIN = VIH / VIL, DO = OPEN, fsk = 250kHz, READ µA CS = SK = DI = GND, DO = OPEN
•Electrical characteristics (unless otherwise noted, Ta = – 40 to 85°C, V
Parameter Input low level voltage Input high level voltage Output low level voltage Output high level voltage Input leakage current Output leakage current Operating current dissipation 2 Standby current Symbol VIL VIH VOL VOH ILI ILO ICC2 ISB Min. – 0.3 Typ. Max. Unit V V V V µA µA mA µA — 0.15 × VCC 0.7 × VCC — VCC + 0.3 — — 0.2 — 1.0 1.0 1 3
CC
= 2.0V)
Conditions — —
IOL = 10µA IOH = – 10µA VIN = 0V ~ VCC VOUT = 0V ~ VCC, CS = 0V VIN = VIH / VIL, DO = OPEN, fsk = 200kHz, READ CS = SK = DI = 0V, DO = OPEN
VCC – 0.4 — – 1.0 – 1.0 — — — — 0.2 0.4
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Memory ICs
Circuit operation • (1) Command mode
BR93LC66 / BR93LC66F / BR93LC.