1/024-Bit Serial Electrically Erasable PROM
Memory ICs
1,024-Bit Serial Electrically Erasable PROM
BR93LL46F / BR93LL46FV
Features • • Low power CMOS technology • ...
Description
Memory ICs
1,024-Bit Serial Electrically Erasable PROM
BR93LL46F / BR93LL46FV
Features Low power CMOS technology 64 × 16 bit configuration 1.8V to 4.0V operation Low power dissipation – 0.5mA (typ.) active current – 0.4µA (typ.) standby current Auto increment for efficient data dump Automatic erase-before-write Hardware and software write protection – Defaults to write-disabled state at power up – Software instructions for write-enable / disable – Vcc lockout inadvertent write protection 8-pin SOP / 8-pin SSOP-B packages Device status signal during write cycle 100,000 ERASE / WRITE cycles 10 years Data Retention
Pin assignments
N.C. VCC CS SK
1 2 3 4
8 7 6 5 (SOP8 / SSOP-B8)
N.C. GND DO DI
BR93LL46F BR93LL46FV
Pin descriptions
Pin Name N.C. VCC CS SK DI DO GND N.C. Not connected Power supply Chip select input Serial clock input Start bit, operating code, address, and serial data input Serial data output, READY / BUSY internal status display output Ground Not connected Function
Overview The BR93LC46F and BR93LL46FV are CMOS serial input / output-type memory circuits (EEPROMs) that can be programmed electrically. Each is configured of 64 words × 16 bits (1,024 bits), and each word can be accessed individually and data read from it and written to it. Operation control is performed using five types of commands. The commands, addresses, and data are input through the DI pin under the control of the CS and SK pins. In a write operation, the inter...
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