MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BRY55-30/D
Silicon Controlled Rectifiers
PNPN devices de...
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BRY55-30/D
Silicon Controlled Rectifiers
P
NPN devices designed for high volume, line-powered consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits. Supplied in an inexpensive TO-226AA (TO-92) package which is readily adaptable for use in automatic insertion equipment. Sensitive Gate Trigger Current — 200 µA Maximum Low Reverse and Forward Blocking Current — 100 µA Maximum, TC = 125°C Low Holding Current — 5 mA Maximum Glass-Passivated Surface for Reliability and Uniformity
BRY55-30* thru 600*
SCRs 0.8 AMPERE RMS 30 TO 600 VOLTS
CASE 29-04 (TO-226AA) STYLE 3 WITH TO-18 LEADFORM*
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
Rating Peak Repetitive Forward and Reverse Blocking Voltage(1) (RGK = 1000 Ω, TJ = 25 to 125°C) Marking: BRY55-1 . . . BRY55-30 -2 . . . BRY55-60 -3 . . . BRY55-100 -4 . . . BRY55-200 -6 . . . BRY55-400 -7 . . . BRY55-500 -8 . . . BRY55-600 Forward Current RMS (All Conduction Angles) Peak Forward Surge Current, TA = 25°C (1/2 Cycle, Sine Wave, 60 Hz) Circuit Fusing Considerations, TA = 25°C (t = 8.3 ms) Peak Gate Power — Forward, TA = 25°C Peak Gate Current Forward, TA = 25°C (300 µs, 120 PPS) Peak Gate Voltage — Reverse Operating Junction Temperature Range @ Rated VRRM and VDRM Storage Temperature Range Symbol VRRM, VDRM 30 60 100 200 400 500 600 IT(RMS) ITSM I2t PGM IGFM VGRM TJ Tstg ...