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BRY55-100 Dataheets PDF



Part Number BRY55-100
Manufacturers Motorola Inc
Logo Motorola  Inc
Description SCRs 0.8 AMPERE RMS 30 TO 600 VOLTS
Datasheet BRY55-100 DatasheetBRY55-100 Datasheet (PDF)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BRY55-30/D Silicon Controlled Rectifiers PNPN devices designed for high volume, line-powered consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits. Supplied in an inexpensive TO-226AA (TO-92) package which is readily adaptable for use in automatic insertion equipment. • • • • Sensitive Gate Trigger Current — 200 µA Maximum Low Reverse and Fo.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BRY55-30/D Silicon Controlled Rectifiers PNPN devices designed for high volume, line-powered consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits. Supplied in an inexpensive TO-226AA (TO-92) package which is readily adaptable for use in automatic insertion equipment. • • • • Sensitive Gate Trigger Current — 200 µA Maximum Low Reverse and Forward Blocking Current — 100 µA Maximum, TC = 125°C Low Holding Current — 5 mA Maximum Glass-Passivated Surface for Reliability and Uniformity BRY55-30* thru 600* SCRs 0.8 AMPERE RMS 30 TO 600 VOLTS CASE 29-04 (TO-226AA) STYLE 3 WITH TO-18 LEADFORM* MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.) Rating Peak Repetitive Forward and Reverse Blocking Voltage(1) (RGK = 1000 Ω, TJ = 25 to 125°C) Marking: BRY55-1 . . . BRY55-30 -2 . . . BRY55-60 -3 . . . BRY55-100 -4 . . . BRY55-200 -6 . . . BRY55-400 -7 . . . BRY55-500 -8 . . . BRY55-600 Forward Current RMS (All Conduction Angles) Peak Forward Surge Current, TA = 25°C (1/2 Cycle, Sine Wave, 60 Hz) Circuit Fusing Considerations, TA = 25°C (t = 8.3 ms) Peak Gate Power — Forward, TA = 25°C Peak Gate Current Forward, TA = 25°C (300 µs, 120 PPS) Peak Gate Voltage — Reverse Operating Junction Temperature Range @ Rated VRRM and VDRM Storage Temperature Range Symbol VRRM, VDRM 30 60 100 200 400 500 600 IT(RMS) ITSM I2t PGM IGFM VGRM TJ Tstg 0.8 8 0.15 0.1 1 5 –40 to +125 –40 to +150 +230 Amp Amps A2s Watt Amp Volts °C °C °C Value Unit Volts Lead Solder Temperature ( 1.5 mm from case, 10 s max.) *European part numbers only. Package is Case 29 with Leadform 18. t 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Motorola Thyristor Device Data © Motorola, Inc. 1995 1 BRY55-30 thru 600 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Symbol RθJC RθJA Max 75 200 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C, RGK = 1000 Ω unless otherwise noted.) Characteristic Peak Forward Blocking Current (VD = Rated VDRM @ TC = 125°C) Peak Reverse Blocking Current (VR = Rated VRRM @ TC = 125°C) Forward “On” Voltage(1) (ITM = 1 A Peak @ TA = 25°C) Gate Trigger Current (Continuous dc)(2) (Anode Voltage = 7 Vdc, RL = 100 Ohms) Gate Trigger Voltage (Continuous dc) (Anode Voltage = 7 Vdc, RL = 100 Ohms) (Anode Voltage = Rated VDRM, RL = 100 Ohms) Holding Current (Anode Voltage = 7 Vdc, initiating current = 20 mA) TC = 25°C TC = 25°C TC = –40°C TC = 125°C TC = 25°C TC = –40°C Symbol IDRM IRRM VTM IGT VGT Min — — — — — — 0.1 — — Max 100 100 1.7 200 0.8 1.2 — 5 10 Unit.


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