DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
BRY61 Programmable unijunction transistor
Product specificati...
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
BRY61 Programmable unijunction
transistor
Product specification Supersedes data of 1997 Jul 21 1999 Apr 27
Philips Semiconductors
Product specification
Programmable unijunction
transistor
DESCRIPTION Planar P
NPN trigger device in a SOT23 plastic package. APPLICATIONS Switching applications such as: – Motor control – Oscillators – Relay replacement – Timers – Pulse shapers, etc. MARKING
1 2
handbook, 2 columns
BRY61
PINNING PIN 1 2 3 anode cathode gate DESCRIPTION
3
handbook, halfpage
anode a g gate
TYPE NUMBER BRY61 Note
MARKING CODE(1) A5∗
k cathode
MGL167
Top view
MGC421
1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia.
Fig.1 Simplified outline SOT23 and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VGA IA(AV) IARM IASM dlA/dt Ptot Tstg Tj Tamb PARAMETER gate-anode voltage average anode current repetitive peak anode current rate of rise of anode current total power dissipation storage temperature junction temperature operating ambient temperature tp = 10 µs; δ = 0.01 1A ≤ 2.5 A Tamb ≤ 25 °C non-repetitive peak anode current tp = 10 µs CONDITIONS − − − − − − −65 − −65 MIN. MAX. 70 175 2.5 3 20 250 +150 150 +150 V mA A A A/µs mW °C °C °C UNIT
1999 Apr 27
2
Philips Semiconductors
Product specification
Programmable unijunction
transistor
THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient CONDITIONS in ...