DISCRETE SEMICONDUCTORS
DATA SHEET
M3D071
BRY62 Silicon controlled switch
Product specification Supersedes data of 199...
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D071
BRY62 Silicon controlled switch
Product specification Supersedes data of 1997 Jul 21 1999 Apr 22
Philips Semiconductors
Product specification
Silicon controlled switch
DESCRIPTION Silicon planar P
NPN switch in a SOT143B plastic package. It is an integrated
PNP/
NPN transistor pair, with all electrodes accessible. APPLICATIONS Switching applications. MARKING TYPE NUMBER BRY62 MARKING CODE A51
1 Top view 2
MSB014
BRY62
PINNING PIN 1 2 3 4 anode gate anode cathode cathode gate DESCRIPTION
handbook, 2 columns 4
3 a ag kg k
MBB068
Fig.1 Simplified outline (SOT143B) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL
NPN transistor VCBO VCER VEBO IC ICM IE IERM VCBO VCEO VEBO IE IERM collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current emitter current (DC) repetitive peak emitter current tp = 10 µs; δ = 0.01 open emitter open base open collector tp = 10 µs; δ = 0.01 open emitter RBE = 10 kΩ open collector note 1 note 2 − − − − − − − − − − − − 70 70 5 175 175 −175 −2.5 −70 −70 −70 175 2.5 V V V mA mA mA A PARAMETER CONDITIONS MIN. MAX. UNIT
PNP transistor collector-base voltage collector-emitter voltage emitter-base voltage emitter current (DC) repetitive peak emitter current V V V mA A
1999 Apr 22
2
Philips Semiconductors
Product specification
Silicon controlled switch
BRY62
SYMBOL Combined device Ptot Tstg Tj Tam...