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1N5817W

Sangdest Microelectronics

SCHOTTKY BARRIER DIODE

Technical Data Data Sheet N1756, Rev. - 1N5817W-1N5819W SCHOTTKY BARRIER DIODE Features: • Metal silicon junction, major...


Sangdest Microelectronics

1N5817W

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Technical Data Data Sheet N1756, Rev. - 1N5817W-1N5819W SCHOTTKY BARRIER DIODE Features: Metal silicon junction, majority carrier conduction Guarding for overvoltage protection Low power loss, high efficiency High current capability Low forward voltage drop High surge capability For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications Mechanical Data: Case: SOD-123FL molded plastic body Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Mechanical Dimensions: In mm/Inches 1N5817W-1N5819W Green Products Symbol A B C D E G Millimeters Min Max 3.55 3.85 2.60 2.90 1.75 1.95 0.90 1.40 0.70 1.20 0.25 - Inches Min Max 0.140 0.152 0.102 0.114 0.069 0.077 0.035 0.055 0.028 0.047 0.010 - SOD-123FL China - Germany - Korea - Singapore - United States http://www.smc-diodes.com - sales@ smc-diodes.com Tec...




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