Barrier Diode. YHE51 Datasheet

YHE51 Datasheet PDF, Equivalent


Part Number

YHE51

Description

Schottky Barrier Diode

Manufacture

PHENITEC

Total Page 1 Pages
PDF Download
Download YHE51 Datasheet PDF


YHE51 Datasheet
PHENITEC
SEMICONDUCTOR
1A 40V(0.82mm)
YHE51
Schottky Barrier Diode
Chip Information
MAXIMUM RATINGS
Parameter
Symbol
Chip Size
0.82 x 0.82mm
Pad Size
0.68 x 0.68mm
Chip Quantity
16276 pcs/wafer
Scribe Line Width
60um
Passivation
PSG
Wafer Size
5 inch
Top Metallization
Al(For Wire)
Chip Thickness/Back Metal : See below "Ordering Information"
Limit
Unit
Note
Repetitive Peak Reverse Voltage
VRRM
40
Non-Repetitive Peak Reverse Voltage
VRSM
Maximum DC Blocking Voltage
VR
Average Forward Rectified Current
IF(AV)
1000
Peak Forward Surge Current
IFSM
Storage and Operating Temperature Range Tj,TSTG
ELECTRICAL CHARACTERISTICS
10
-65 to +125
Parameter
Symbol Spec Limit Probe Spec
Maximum Forward Voltage
VF1 0.320 0.310
VF2 0.450
VF3 0.750
VF4
VF5
Maximum DC Reverse Current IR1
1000
300
IR2 50
40
IR3 75
65
IR4
V
V
V
mA
A 8.3ms Single Half Sine-Wave
degC
Typical Unit
Test Condition
0.250
0.405
0.665
55
20
25
V IF=100mA
V IF=1A
V IF=3A
V
V
uA VR=20V
uA VR=2V
uA VR=3V
uA
Ta=25degC
Ta=25degC
Ta=25degC
Ta=25degC
Ta=25degC
Ta=25degC
Reverse Breakdown Voltage
Junction Capacitance
Reverse Recovery Time
BV
Cj
trr
42
45 60 V IR=0.6mA
60 pF VR=2V, f=1MHz
nS
Ordering Information
Chip Type Chip Thickness
YHE515
YHE517
YHE516
180 +/- 20um
150 +/- 20um
180 +/- 20um
Back Metal
Au(For Eutectic)
Au(For Eutectic)
Ti-Ni-Ag(For Ag Epoxy)
Note:
Designed For 1N5817W
SHEET NO F06058A
REV. 1


Features Datasheet pdf PHENITEC SEMICONDUCTOR 1A 40V(0.82mm) Y HE51 Schottky Barrier Diode Chip Infor mation MAXIMUM RATINGS Parameter Symb ol Chip Size 0.82 x 0.82mm Pad Size 0.68 x 0.68mm Chip Quantity 16276 pc s/wafer Scribe Line Width 60um Passi vation PSG Wafer Size 5 inch Top Me tallization Al(For Wire) Chip Thickne ss/Back Metal : See below "Ordering Inf ormation" Limit Unit Note Repetitiv e Peak Reverse Voltage VRRM 40 Non-R epetitive Peak Reverse Voltage VRSM M aximum DC Blocking Voltage VR Average Forward Rectified Current IF(AV) 100 0 Peak Forward Surge Current IFSM St orage and Operating Temperature Range T j,TSTG ELECTRICAL CHARACTERISTICS 10 - 65 to +125 Parameter Symbol Spec Limi t Probe Spec Maximum Forward Voltage VF1 0.320 0.310 VF2 0.450 VF3 0.750 VF4 VF5 Maximum DC Reverse Current IR 1 1000 300 IR2 50 40 IR3 75 65 I R4 V V V mA A 8.3ms Single Half Sine-W ave degC Typical Unit Test Condition 0.250 0.405 0.665 55 20 25 V IF=100mA V IF=1A V IF=3A V V uA .
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