Flash Memory and SRAM
PRELIMINARY
Am50DL128BG
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
Two Am29DL640G 64 Megabit (8 M x 8-Bit/4 ...
Description
PRELIMINARY
Am50DL128BG
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
Two Am29DL640G 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memories and 32 Mbit (2 M x 16-Bit) Pseudo Static RAM with Page Mode
DISTINCTIVE CHARACTERISTICS
MCP Features
■ Power supply voltage of 2.7 to 3.3 volt
■ High performance — Access time as fast as 70 ns
■ Package — 73-Ball FBGA
■ Operating Temperature — –40°C to +85°C
Flash Memory Features
ARCHITECTURAL ADVANTAGES
■ Simultaneous Read/Write operations — Data can be continuously read from one bank while executing erase/program functions in another bank. — Zero latency between read and write operations
■ Flexible Bank architecture — Read may occur in any of the three banks not being written or erased. — Four banks may be grouped by customer to achieve desired bank divisions.
■ Manufactured on 0.17 µm process technology ■ SecSi™ (Secured Silicon) Sector: Extra 256 Byte sec...
Similar Datasheet