UM9441

WWW.Microsemi .COM UM9441 PIN RADIATION DETECTORS DESCRIPTION Description temperature so long as applied voltage Silicon PIN devices are effective exceeds the saturation voltage. This detectors of nuclear and structure also minimizes the effects of electromagnetic radiation. This includes permanent damage caused by neutrons and gamma radiation, electrons, and X-rays. other high energy radiation. Experiments on The detectors can be used across the devices of the UM9441 design show no temperature range of -55 oC to +175 oC degradation in gamma sensitivity resulting instead of being restricted to use at low from a total dose of 1014 neutrons/cm2 of temperatures. 1 MeV equivalent. The absorbed radiation produces Package electron-hole pairs in the space charge The UM9441 is an axially leaded device region. These charges are swept out by constructed by metallurgically bonding the the applied field and result in a current PIN chip in between two molybdenum flow proportion...