Bridge Rectifiers. MB8M Datasheet


MB8M Rectifiers. Datasheet pdf. Equivalent


MB8M


Silicon Bridge Rectifiers
Silicon Bridge Rectifiers

Production specification
MB4M--MB10M

Features
 Glass passivated junction  High surge current capability  Saves space on printed circuit boards  High temperature soldering guaranteed:
260°C/10 seconds  RoHS Compliant
Mechanical Data
 Case: Molded plastic body RoHS-compliant  Molding compound meets UL 94 V-0 flammability rating  Terminals: Lead Free Plating (Matte Tin Finish.)  Polarity indicator: As marked on body

Maximum Ratings (@TA = 25°C unless otherwise specified)

Characteristic

Symbol MB4M MB6M MB8M

Peak repetitive reverse voltage

VRRM

400

600

800

RMS reverse voltage

VRMS 280 420 560

DC blocking voltage

VDC 400 600 800

Maximum average forward output current

IF(AV)

1.0

Peak forward surge current, 8.3ms single half-sine-wave I2t Rating for fusing

@TJ= 25°C @TJ= 25°C

IFSM I2t

35 5.1

MB10M 1000 700 1000

Units V V V A

A A2s

Thermal Characteristics

Parameter

Symbol MB4M MB6M MB8M

Typical thermal resista...



MB8M
Silicon Bridge Rectifiers
Production specification
MB4M--MB10M
Features
Glass passivated junction
High surge current capability
Saves space on printed circuit boards
High temperature soldering guaranteed:
260°C/10 seconds
RoHS Compliant
Mechanical Data
Case: Molded plastic body RoHS-compliant
Molding compound meets UL 94 V-0 flammability rating
Terminals: Lead Free Plating (Matte Tin Finish.)
Polarity indicator: As marked on body
Maximum Ratings (@TA = 25°C unless otherwise specified)
Characteristic
Symbol MB4M MB6M MB8M
Peak repetitive reverse voltage
VRRM
400
600
800
RMS reverse voltage
VRMS 280 420 560
DC blocking voltage
VDC 400 600 800
Maximum average forward output current
IF(AV)
1.0
Peak forward surge current,
8.3ms single half-sine-wave
I2t Rating for fusing
@TJ= 25°C
@TJ= 25°C
IFSM
I2t
35
5.1
MB10M
1000
700
1000
Units
V
V
V
A
A
A2s
Thermal Characteristics
Parameter
Symbol MB4M MB6M MB8M
Typical thermal resistance per leg
(Note 1)
R ΘJA
R ΘJC
R ΘJL
73
29
25
Operating junction temperature range
TJ
- 55 ---- + 150
Storage temperature range
TSTG
- 55 ---- + 150
Note:
1. Device mounted on PCB with 10 mm x 20 mm x 0.1mm copper pad areas
MB10M Units
°C/W
°C
°C
MBM701AA
Rev.B
www.gmesemi.com

MB8M
Silicon Bridge Rectifiers
Production specification
MB4M--MB10M
Electrical Characteristics (@TA = 25°C unless otherwise specified)
Parameter
Symbol
Test conditions
Typ.
Max.
Maximum instantaneous
forward voltage
Maximum Reverse current
VF IF=0.4A Per Diode
Rated VR,
IR
Per Diode
@TA=25°C
@TA=125°C
--
--
--
1
5
100
Units
V
μA
MBM701AA
Rev.B
www.gmesemi.com




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