BRIDGE RECTIFIERS. GBJ2500 Datasheet

GBJ2500 RECTIFIERS. Datasheet pdf. Equivalent

Part GBJ2500
Description SILICON BRIDGE RECTIFIERS
Feature GBJ2500 - GBJ2510 SILICON BRIDGE RECTIFIERS PRV : 50 - 1000 Volts Io : 25 Amperes RBV25 3.9 ± 0.2.
Manufacture EIC
Datasheet
Download GBJ2500 Datasheet

GBJ2500 - GBJ2510 SILICON BRIDGE RECTIFIERS PRV : 50 - 100 GBJ2500 Datasheet
MCC Features   omponents 21201 Itasca Stree GBJ25005 Datasheet
GBJ25005 thru GBJ2510 GLASS PASSIVATED BRIDGE RECTIFIERS FEA GBJ25005 Datasheet
Elektronische Bauelemente GBJ25005 ~ GBJ2510 Voltage 50V ~ GBJ25005 Datasheet
GBJ25005 THRU GBJ2510 SILICON BRIDGE RECTIFIERS Reverse Vol GBJ25005 Datasheet
GBJ25005 thru GBJ2510 ® Pb Free Plating Product GBJ25005 GBJ25005 Datasheet
Single-Phase Glass Passivated Bridge Rectifier GBJ25005 – GB GBJ25005 Datasheet
SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIER GBJ25005 THR GBJ25005 Datasheet
GBJ25005 THRU GBJ2510 GLASS PASSIVATED SINGLE-PHASE BRIDGE GBJ25005 Datasheet
LITE-ON SEMICONDUCTOR GBJ25005 thru GBJ2510 GLASS PASSIVAT GBJ25005 Datasheet
Recommendation Recommendation Datasheet GBJ2500 Datasheet





GBJ2500
GBJ2500 - GBJ2510
SILICON BRIDGE RECTIFIERS
PRV : 50 - 1000 Volts
Io : 25 Amperes
RBV25
3.9 ± 0.2
C3 30 ± 0.3 4.9 ± 0.2
FEATURES :
* Glass Passivated Die Construction
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* High case dielectric strength of 2000 VDC
* High current capability
* Very good heat dissipation
* Pb / RoHS Free
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 8.17 grams ( Approximaly )
3.2 ± 0.1
+ ~~
1.0 ± 0.1
10 7.5 7.5
±0.2 ±0.2 ±0.2
2.7 ± 0.2
0.7 ± 0.1
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current Tc = 100°C
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Current Squared Time at t < 8.3 ms.
Maximum Forward Voltage per Diode at IF = 12.5 A
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Ta = 25 °C
Ta = 100 °C
Thermal Resistance, Junction to Case
Operating Junction Temperature Range
Storage Temperature Range
SYMBOL
GBJ
2500
VRRM
50
VRMS
35
VDC 50
IF(AV)
GBJ
2501
100
70
100
GBJ
2502
200
140
200
GBJ
2504
400
280
400
25
GBJ
2506
600
420
600
GBJ
2508
800
560
800
GBJ
2510
1000
700
1000
UNIT
V
V
V
A
IFSM 300 A
I2t
VF
IR
IR(H)
RθJC
TJ
TSTG
510
1.1
10
500
0.6
- 40 to + 150
- 40 to + 150
A2S
V
µA
µA
°C/W
°C
°C
Note :
1. Thermal resistance from junction to case per element. Unit mounted on 220 x 220 x 1.6mm aluminum plate heat sink.
Page 1 of 2
Rev. 03 : September 9, 2005



GBJ2500
RATING AND CHARACTERISTIC CURVES ( GBJ2500 - GBJ2510 )
FIG.1 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
30
with heatsink
25
20
Resistive or Inductive load
15
10
5
0
0 25 50 75 100 125 150 175
CASE TEMPERATURE, ( °C)
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
PER DIODE
100
10
Pulse Width = 300 µs
1.0
Tj = 25 °C
0.1
0.01
0.4
0.6 0.8 1.0 1.2 1.4 1.6 1.8
FORWARD VOLTAGE, VOLTS
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
300
250
200 TJ = 25 °C
150
100
50
SINGLE HALF SINE WAVE
JEDEC METHOD
0
12
4 6 10 20 40 60 10
NUMBER OF CYCLES AT 60Hz
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
PER DIODE
10
Tj = 100 °C
1.0
0.1 Tj = 25 °C
0.0
0
20 40 60 80 100 12
PERCENT OF RATED
REVERSE VOLTAGE, (%)
140
Page 2 of 2
Rev. 03 : September 9, 2005





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)