Document
TRANSISTOR ARRAY UPA101G
FEATURES
• BUILT-IN ULTRAHIGH FREQUENCY MULTIPLIER: (9 GHz Single Transistors)
• OUTSTANDING hFE LINEARITY • SMALL PACKAGE • TAPE AND REEL PACKAGING OPTION
AVAILABLE
DESCRIPTION
This SiIicon MMIC transistor array contains six (6), 9 GHz bipolar transistors. Applications include a multiplier, double balanced mixer, phase detector, or AGC circuit. NEC's stringent quality assurance and test procedures ensure the highest reliability and performance.
CONNECTION DIAGRAM (Top View)
UPA101G 8 76 5
Q1 Q2 Q5
Q3 Q4 Q6
1 23 4
ELECTRICAL CHARACTERISTICS (TA = 25°C)
SYMBOLS ICBO IEBO hFE
hFE1/hFE2 CEB fT1 RRTH
PART NUMBER PACKAGE OUTLINE PARAMETERS AND CONDITIONS Collector Cut-off Current at VCB = 5 V, IE = 0 (All transistors) Emitter Cut-off Current at VEB = 1 V, IC = 0 (Q5 and Q6) Direct Current Amplification, VCE = 3 V, IC = 1 mA (Q5 and Q6) Direct Current Amplification Ratio, VCE = 3 V, IC = 1 mA, (Q5 and Q6) Emitter to Base Capacitance at VEB = 0, f = 1.