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UPA101G Dataheets PDF



Part Number UPA101G
Manufacturers NEC
Logo NEC
Description TRANSISTOR ARRAY
Datasheet UPA101G DatasheetUPA101G Datasheet (PDF)

TRANSISTOR ARRAY UPA101G FEATURES • BUILT-IN ULTRAHIGH FREQUENCY MULTIPLIER: (9 GHz Single Transistors) • OUTSTANDING hFE LINEARITY • SMALL PACKAGE • TAPE AND REEL PACKAGING OPTION AVAILABLE DESCRIPTION This SiIicon MMIC transistor array contains six (6), 9 GHz bipolar transistors. Applications include a multiplier, double balanced mixer, phase detector, or AGC circuit. NEC's stringent quality assurance and test procedures ensure the highest reliability and performance. CONNECTION DIAGRAM (Top.

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TRANSISTOR ARRAY UPA101G FEATURES • BUILT-IN ULTRAHIGH FREQUENCY MULTIPLIER: (9 GHz Single Transistors) • OUTSTANDING hFE LINEARITY • SMALL PACKAGE • TAPE AND REEL PACKAGING OPTION AVAILABLE DESCRIPTION This SiIicon MMIC transistor array contains six (6), 9 GHz bipolar transistors. Applications include a multiplier, double balanced mixer, phase detector, or AGC circuit. NEC's stringent quality assurance and test procedures ensure the highest reliability and performance. CONNECTION DIAGRAM (Top View) UPA101G 8 76 5 Q1 Q2 Q5 Q3 Q4 Q6 1 23 4 ELECTRICAL CHARACTERISTICS (TA = 25°C) SYMBOLS ICBO IEBO hFE hFE1/hFE2 CEB fT1 RRTH PART NUMBER PACKAGE OUTLINE PARAMETERS AND CONDITIONS Collector Cut-off Current at VCB = 5 V, IE = 0 (All transistors) Emitter Cut-off Current at VEB = 1 V, IC = 0 (Q5 and Q6) Direct Current Amplification, VCE = 3 V, IC = 1 mA (Q5 and Q6) Direct Current Amplification Ratio, VCE = 3 V, IC = 1 mA, (Q5 and Q6) Emitter to Base Capacitance at VEB = 0, f = 1.


UPA101 UPA101G HFA3101


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