BS170

BS 170 SIPMOS ® Small-Signal Transistor N channel Enhancement mode Logic Level VGS(th) = 0.8...2.0V Pin 1 S Type BS 170 Type BS 170 Pin 2 G Marking BS 170 Pin 3 D VDS 60 V ID 0.3 A RDS(on) 5Ω Package TO-92 Ordering Code Q67000-S076 Tape and Reel Information E6288 Maximum Ratings Parameter Drain source voltage Drain-gate voltage Symbol Values 60 60 Unit V VDS V DGR RGS = 20 kΩ Gate source voltage Gate-source peak voltage,aperiodic Continuous drain current VGS Vgs ID ± 14 ± 20 A 0.3 TA = 25 °C DC drain current, pulsed IDpuls 1.2 TA = 25 °C Power dissipation Ptot 0.63 W TA = 25 °C Semiconductor Group 1 12/05/1997 BS 170 Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air 1) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Symbol Values -55 ... + 150 -55 ... + 150 ≤ 200 E 55 / 150 / 56 K/W Unit °C Tj Tstg RthJA Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 60 1.4 0.05 1 2.5 2 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) 0.8 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS 0.5 5 µA VDS = 60 V, VGS = 0 V, Tj = 25 °C VDS = 60 V, VGS = 0 V, Tj = 125 °C Gate-source leakage current IGSS 10 nA Ω 5 VGS = 20 V, VDS = 0 V Drain-Source on-state resistance RDS(on) VGS = 10 V, ID = 0.2 A Semiconduct...