ZMM8V2 Zener Diodes Datasheet

ZMM8V2 Datasheet, PDF, Equivalent


Part Number

ZMM8V2

Description

Silicon Epitaxial Planar Zener Diodes

Manufacture

JGD

Total Page 5 Pages
Datasheet
Download ZMM8V2 Datasheet


ZMM8V2
Features
ZMM1 THRU ZMM75
Silicon Epitaxial Planar Zener Diodes
* MiniMELF case especially for automatic insertion.
* Smaller voltage tolerances and higher Zener voltages are upon request.
* These diodes are also available in DO-35 case with
the type designation BZX55C…
C
Cathode
B
A
LL-34
INCHES
MM
DIM
MIN MAX MIN MAX
A
0.134
0.142
3.40
3.60
B
0.008
0.016
0.20
0.40
C
0.055
0.059
1.40
1.50
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
Ptot
Tj
Tstg
Note:1) Valid provided that electrodes are kept at ambient temperature
Value
5001)
175
- 55 to + 175
Characteristics (TA=25unless otherwise noted)
Parameter
Thermal Resistance Junction to Ambient Air
Forward Voltage
at IF = 100 mA
Note:1) Valid provided that electrodes are kept at ambient temperature
Symbol
RthA
VF
Max.
0.31)
1
Unit
mW
Unit
K/mW
V
Version: 6.1
www.jgdsemi.com

ZMM8V2
ZMM1 THRU ZMM75
Silicon Epitaxial Planar Zener Diodes
Electrical Characteristics (TA=25unless otherwise noted)
Type
Zener Voltage Range 1)
V Znom
VZT at lZT
Dynamic Resistance
ZZT ZZK at IZK
Reverse Leakage Current
Ta = 25 Ta = 125 at VR
Temp. Coefficient of
Zener Voltage
ZMM12)
ZMM2V0
ZMM2V2
ZMM2V4
ZMM2V7
ZMM3V0
ZMM3V3
ZMM3V6
ZMM3V9
ZMM4V3
ZMM4V7
ZMM5V1
ZMM5V6
ZMM6V2
ZMM6V8
ZMM7V5
ZMM8V2
ZMM9V1
ZMM10
ZMM11
ZMM12
ZMM13
ZMM15
ZMM16
ZMM18
ZMM20
ZMM22
ZMM24
ZMM27
ZMM30
ZMM33
ZMM36
ZMM39
ZMM43
ZMM47
ZMM51
ZMM56
ZMM62
ZMM68
ZMM75
(V)
0.75
2
2.2
2.4
2.7
3
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
(V)
0.7...0.8
1.8...2.15
2.08...2.33
2.28...2.56
2.5...2.9
2.8...3.2
3.1...3.5
3.4...3.8
3.7...4.1
4...4.6
4.4...5
4.8...5.4
5.2...6
5.8...6.6
6.4...7.2
7...7.9
7.7...8.7
8.5...9.6
9.4...10.6
10.4...11.6
11.4...12.7
12.4...14.1
13.8...15.6
15.3...17.1
16.8...19.1
18.8...21.2
20.8...23.3
22.8...25.6
25.1...28.9
28...32
31...35
34...38
37...41
40...46
44...50
48...54
52...60
58...66
64...72
70...79
(mA)
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
Max. (Ω)
8
85
85
85
85
85
85
85
85
75
60
35
25
10
8
7
7
10
15
20
20
26
30
40
50
55
55
80
80
80
80
80
90
90
110
125
135
150
200
250
Max. (Ω)
50
600
600
600
600
600
600
600
600
600
600
550
450
200
150
50
50
50
70
70
90
110
110
170
170
220
220
220
220
220
220
220
500
500
600
700
700
1000
1000
1000
(mA)
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
Max. (µA)
-
100
75
50
10
4
2
2
2
1
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
Max. (µA)
-
200
160
100
50
40
40
40
40
20
10
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
5
5
5
10
10
10
10
10
(V)
-
1
1
1
1
1
1
1
1
1
1
1
1
2
3
5
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
TKvz (%/K)
-0.26...-0.23
-0.09...-0.06
-0.09...-0.06
-0.09...-0.06
-0.09...-0.06
-0.08...-0.05
-0.08...-0.05
-0.08...-0.05
-0.08...-0.05
-0.06...-0.03
-0.05...+0.02
-0.02...+0.02
-0.05...+0.05
0.03...0.06
0.03...0.07
0.03...0.07
0.03...0.08
0.03...0.09
0.03...0.1
0.03...0.11
0.03...0.11
0.03...0.11
0.03...0.11
0.03...0.11
0.03...0.11
0.03...0.11
0.04...0.12
0.04...0.12
0.04...0.12
0.04...0.12
0.04...0.12
0.04...0.12
0.04...0.12
0.04...0.12
0.04...0.12
0.04...0.12
0.04...0.12
0.04...0.12
0.04...0.12
0.04...0.12
Note
1) Tested with pulses tp = 20 ms.
2) The ZMM1 is a silicon diode with operation in forward direction. Hence, the index of all parameters should be "F" instead of "Z".
Connect the cathode electrode to the negative pole.
Version: 6.1
www.jgdsemi.com


Features Features ZMM1 THRU ZMM75 Silicon Epitax ial Planar Zener Diodes * MiniMELF cas e especially for automatic insertion. * Smaller voltage tolerances and higher Zener voltages are upon request. * Thes e diodes are also available in DO-35 ca se with the type designation BZX55C… C Cathode B A LL-34 INCHES MM DI M MIN MAX MIN MAX A 0.134 0.142 3. 40 3.60 B 0.008 0.016 0.20 0.40 C 0.055 0.059 1.40 1.50 Absolute M aximum Ratings (TA=25℃ unless otherwi se noted) Parameter Power Dissipation Junction Temperature Storage Temperatur e Range Symbol Ptot Tj Tstg Note:1) V alid provided that electrodes are kept at ambient temperature Value 5001) 175 - 55 to + 175 Characteristics (TA=25 unless otherwise noted) Parameter Th ermal Resistance Junction to Ambient Ai r Forward Voltage at IF = 100 mA Note:1 ) Valid provided that electrodes are ke pt at ambient temperature Symbol RthA VF Max. 0.31) 1 Unit mW ℃ ℃ Unit K/mW V Version: 6.1 www.jgdsemi.com ZMM1 THRU ZMM75 Silicon .
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