BS616UV4010

BSI „ FEATURES Ultra Low Power/Voltage CMOS SRAM 256K X 16 bit „ DESCRIPTION BS616UV4010 Ultra low operation voltage : 1.8 ~ 3.6V Ultra low power consumption : Vcc = 2.0V C-grade: 15mA (Max.) operating current I-grade: 20mA (Max.) operating current 0.20uA (Typ.) CMOS standby current Vcc = 3.0V C-grade: 20mA (Max.) operating current I-grade: 25mA (Max.) operating current 0.25uA (Typ.) CMOS standby current High speed access time : -70 70ns (Max.) at Vcc = 2.0V -10 100ns (Max.) at Vcc = 2.0V Automatic power down when chip is deselected Three state outputs and TTL compatible Fully static operation Data retention supply voltage as low as 1.5V Easy expansion with CE and OE options I/O Configuration x8/x16 selectable by LB and UB pin The BS616UV4010 is a high performance, Ultra low power CMOS Static Random Access Memory organized as 262,144 words by 16 bits and operates from a wide range of 1.8V to 3.6V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 0.20uA and maximum access time of 70/100ns in 2.0V operation. Easy memory expansion is provided by an active LOW chip enable(CE) and active LOW output enable(OE) and three-state output drivers. The BS616UV4010 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BS616UV4010 is available in DICE form, JEDEC standard 44-pin TSOP Type 2 package and 48-pin BGA p...