BS616UV8011

BSI „ FEATURES Ultra Low Power/Voltage CMOS SRAM 512K X 16 bit „ DESCRIPTION BS616UV8011 Ultra low operation voltage : 1.8 ~ 2.3V Ultra low power consumption : Vcc = 2.0V C-grade: 20mA (Max.) operating current I-grade : 25mA (Max.) operating current 0.6uA (Typ.) CMOS standby current High speed access time : -70 70ns (Max.) at Vcc=2V -10 100ns (Max.) at Vcc=2V Automatic power down when chip is deselected Three state outputs and TTL compatible Fully static operation Data retention supply voltage as low as 1.5V Easy expansion with CE2,CE1 and OE options I/O Configuration x8/x16 selectable by LB and UB pin The BS616UV8011 is a high performance, ultra low power CMOS Static Random Access Memory organized as 524,288 words by 16 bits and operates from a wide range of 1.8V to 2.3V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 0.6uA and maximum access time of 70/100ns in 2V operation. Easy memory expansion is provided by an active LOW chip enable(CE1), active HIGH chip enable (CE2), active LOW output enable(OE) and three-state output drivers. The BS616UV8011 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BS616UV8011 is available in 48-pin BGA package. „ PRODUCT FAMILY PRODUCT FAMILY OPERATING TEMPERATURE Vcc RANGE SPEED (ns) POWER DISSIPATION STANDBY (ICCSB1 , Max) Operating (I CC , Max) PKG TYPE ...