FAST RECTIFIERS. US2D Datasheet

US2D RECTIFIERS. Datasheet pdf. Equivalent


YS US2D
SEMICONDUCTOR
DATA SHEET
US2A THRU US2M
SURFACE MOUNT REVERSE VOLTAGE - 50 to 1000 Volts
ULTRA FAST RECTIFIERS FORWARD CURRENT - 2 Ampere
FEATURES
Glass passivated chip
Ultra fast switching for high efficiency
For surface mounted applications
Low forward voltage drop and high current capability
Low reverse leakage current
Plastic material has UL flammability classification 94V-0
High temperature soldering : 260OC / 10 seconds at terminals
Pb free product at available : 99% Sn above meet RoHS environment
substance directive request
MECHANCALDATA
Case: DO-214AC full molded plastic package
Case : Molded plastic
Polarity : Indicated by cathode band
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
SMA/DO-214AC Unit:inch(mm)
.062(1.60)
.047(1.20)
.114(2.90)
.098(2.50)
.181(4.60)
.157(4.00)
.096(2.44)
.078(2.00)
.060(1.52)
.030(0.76)
.008(.203 )
.002(.051)
.208(5.28)
.188(4.80)
.012(.305)
.006(.152)
CHARACTERISTICS
SYMBOL US2A US2B US2D US2G US2J
Maximum Recurrent Peak Reverse Voltage
VRRM
50
100 200 400
Maximum RMS Voltage
VRMS
35
70 140 280
Maximum DC Blocking Voltage
VDC 50 100 200 400
Maximum Average Forward
Rectified Current
@TL =75 C
IAV
2.0
Peak Forward Surge Current
8.3ms single half sine-wave
IFSM
60
super imposed on rated load (JEDEC METHOD)
Maximum forward Voltage at 2.0A DC
VF 1.0 1.3
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@TJ =25 C
@TJ =100 C
IR
5
100
Maximum Reverse Recovery Time (Note 1)
CJ
20
Typical Junction
Capacitance (Note 2)
TRR
50
Typical Thermal Resistance (Note 3)
RӨJC
30
Operating Temperature Range
TJ
-55 to +150
Storage Temperature Range
TSTG
-55 to +150
NOTES:
1. Measured at 1 MHz and applied reverse voltage of 4.0 VDC.
2. Reverse Recovery Test Conditions: IF=.5A, IR=1A, Irr=.25A.
3. Thermal resistance from Junction to ambient and from junction to lead 0.375” (9.5mm) P.C.B mounted.
600
420
600
1.5
US2K
800
560
800
US2M UNITS
1000
700
1000
V
V
V
A
1.7
10
75
A
V
µA
pF
ns
C/W
C
C
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REV.03 20140409


US2D Datasheet
Recommendation US2D Datasheet
Part US2D
Description ULTRA FAST RECTIFIERS
Feature US2D; SEMICONDUCTOR DATA SHEET US2A THRU US2M SURFACE MOUNT REVERSE VOLTAGE - 50 to 1000 Volts ULTRA FAS.
Manufacture YS
Datasheet
Download US2D Datasheet




YS US2D
RATING AND CHARACTERISTIC CURVES
US2A THRU US2M
+0.5A
0
-0.25
trr
NOTE:1.Rise Time = 7ns max.
Input Impedance = 1 megohm. 22pF
2.Rise Time = 10ns max.
Source Impedance = 50 Ohms
-1.0
SET TIME
BASE FOR
50 ns/cm
1cm
Fig. 1-REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
10
TYPICAL
TJ = 25 ¢J
US2G
US2J
US2A
1.0
0.1
US2M
.01
0
1.0 1.2 1.4 1.6 1.8
Instantaneous Forward Voltage (V)
Fig. 2-FORWARD CHARACTERISTICS
SINGLE PHASE HALF WAVE
RESISTIVE OR INDUCTIVE
P.C.B MOUNTED ON
0.315×0.315"(8.0×8.0mm)
PAD AREAS
2.0
75 150
LEAD TEMPERATURE, ¢J
Fig. 3-FORWARD CURRENT DERATING CURVE
100
US2G
TJ = 25 ¢J
f = 1.0MHz
Vsig = 50m Vp-p
10 US2M
60
8.3ms SINGLE HALF SINE WAVE
JEDEC METHOD
1
0.1 1 4 10
REVERSE VOLTAGE, VOLTS
100
Fig. 4-TYPICAL JUNCTION CAPACITANCE
12
5 10 20
50 100
NUMBER OF CYCLES AT 60Hz
Fig. 5-PEAK FORWARD SURGE CURRENT
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REV.03 20140409





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