BS62LV1025

BSI „ FEATURES Very Low Power/Voltage CMOS SRAM 128K X 8 bit „ DESCRIPTION BS62LV1025 Vcc operation voltage : 4.5V ~ 5.5V Very low power consumption : Vcc = 5.0V C-grade : 35mA (Max.) operating current I- grade : 40mA (Max.) operating current 0.4uA (Typ.) CMOS standby current High speed access time : -55 55ns (Max.) at Vcc = 5.0V -70 70ns (Max.) at Vcc = 5.0V Automatic power down when chip is deselected Three state outputs and TTL compatible Fully static operation Data retention supply voltage as low as 1.5V Easy expansion with CE2, CE1, and OE options „ PRODUCT FAMILY PRODUCT FAMILY BS62LV1025SC BS62LV1025TC BS62LV1025STC BS62LV1025PC BS62LV1025JC BS62LV1025DC BS62LV1025SI BS62LV1025TI BS62LV1025STI BS62LV1025PI BS62LV1025JI BS62LV1025DI OPERATING TEMPERATURE Vcc RANGE The BS62LV1025 is a high performance, very low power CMOS Static Random Access Memory organized as 131,072 words by 8 bits and operates from a wide range of 4.5V to 5.5V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 0.4uA and maximum access time of 55ns in 5V operation. Easy memory expansion is provided by an active LOW chip enable (CE1), an active HIGH chip enable (CE2), and active LOW output enable (OE) and three-state output drivers. The BS62LV1025 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BS62LV1025 is available in ...