Si7806DN

Si7806DN Vishay Siliconix N-Channel 30-V (D-S) Fast Switching MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 0.011 at VGS = 10 V 30 0.0175 at VGS = 4.5 V ID (A) 14.4 12.6 PowerPAK 1212-8 FEATURES TrenchFET® Power MOSFET PWM Optimized New Low Thermal Resistance PowerPAK® Package with Low 1.07-mm Profile Available RoHS* COMPLIANT APPLICATIONS DC/DC Converters – Secondary Synchronous Rectifier – High–Side MOSFET in Synchronous Buck 3.30 mm D 8D 7 D 6 D 5 S 1S 3.30 mm 2 S 3 G 4 Bottom View Ordering Information: Si7806DN-T1 Si7806DN–T1–E3 (Lead (Pb)–free) D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 secs Steady State Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa TA = 25 °C TA = 70 °C Operating Junction and Storage Temperat...