Recovery Rectifier. ES3A Datasheet

ES3A Rectifier. Datasheet pdf. Equivalent

Part ES3A
Description Surface Mount Superfast Recovery Rectifier
Feature Jingdao Microelectronics Surface Mount Superfast Recovery Rectifier Reverse Voltage – 50 to 600 V F.
Manufacture Jingdao Microelectronics
Datasheet
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ES3A
山东晶导微电子有限公司
Jingdao Microelectronics
Surface Mount Superfast Recovery Rectifier
Reverse Voltage – 50 to 600 V
Forward Current – 3 A
FEATURES
• For surface mounted applications
• Low profile package
• Glass Passivated Chip Junction
• Superfast reverse recovery time
• Lead free in comply with EU RoHS 2011/65/EU directives
MECHANICAL DATA
• Case: SMA
• Terminals: Solderable per MIL-STD-750, Method 2026
• Approx. Weight: 0.055g / 0.002oz
ES3A THRU ES3J
PINNING
PIN DESCRIPTION
1 Cathode
2 Anode
12
Top View
Marking Code:ES3A~ES3J
Simplified outline SMA and symbol
Absolute Maximum Ratings and Characteristics
Ratings at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Parameter
Symbols ES3A ES3B ES3C ES3D ES3E ES3G ES3J Units
Maximum Repetitive Peak Reverse Voltage
VRRM
50 100 150 200 300 400 600 V
Maximum RMS voltage
VRMS 35 70 105 140 210 280 420 V
Maximum DC Blocking Voltage
VDC
Maximum Average Forward Rectified Current
at Tc = 125 °C
Peak Forward Surge Current 8.3 ms Single Half
Sine Wave Superimposed on Rated Load
I F ( AV )
IFSM
50 100 150 200 300 400 600 V
3A
80 A
Maximum Forward Voltage at 3 A
Maximum DC Reverse Current Ta = 25 °C
at Rated DC Blocking Voltage Ta =125 °C
Typical Junction Capacitance
at VR=4V, f=1MHz
VF
IR
Cj
1
1.25
1.68 V
5 μA
100
40 pF
Maximum Reverse Recovery Time 1
trr
35 ns
Typical Thermal Resistance2
Operating and Storage Temperature Range
RθJA
RθJC
Tj, Tstg
50
16
-55 ~ +150
°C/W
°C
1Measured with IF = 0.5 A, IR = 1 A, Irr = 0.25 A.
2P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas.
2016.05
SMA-E-ES3A~ES3J-3A600V
Page 1 of 3



ES3A
山东晶导微电子有限公司
Jingdao Microelectronics
ES3A THRU ES3J
Fig.1 Reverse Recovery Time Characteristic And Test Circuit Diagram
50 ohm
Noninductive
10 ohm
Noninductive
trr
+0.5
+
25Vdc
approx
-
1 ohm
NonInductive
D.U.T
PULSE
GENERATOR
Note 2
OSCILLOSCOPE
Note 1
0
-0.25
Note1.Rise Time = 7ns, max.
Input Impedance = 1megohm,22pF.
2. Ries Time =10ns, max.
Source Impedance = 50 ohms.
Fig.2 Maximum Average Forward Current Rating
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5 Single phase half-wave 60 Hz
resistive or inductive load
0.0
25 50 75 100
125
Case Temperature (°C)
150
175
Fig.4 Typical Forward Characteristics
10
TJ=25°C
1.0
0.1
0.01
ES3A~ES3D
ES3E/ES3G
ES3J
0.001
0
0.5 1.0 1.5 2.0
Instaneous Forward Voltage (V)
2.5
Fig.6 Maximum Non-Repetitive Peak
Forward Surage Current
120
100
80
60
40
20
8.3 ms Single Half Sine Wave
(JEDEC Method)
00
1
10
Number of Cycles
100
-1.0
10ns/div
Set time Base for 10ns/div
Fig.3 Typical Reverse Characteristics
300
100
TJ=125°C
10
TJ=75°C
1.0
TJ=25°C
0.1
0
20 40 60 80
% of PIV.VOLTS
100
Fig.5 Typical Junction Capacitance
TJ=25°C
100
10
TJ=25°C
f = 1.0MHz
Vsig = 50mVp-p
1
0.1
1.0
10
Reverse Voltage (V)
100
2016.05
www.sdjingdao.com
Page 2 of 3





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