JANTXV2N4857 Datasheet: N-CHANNEL J-FET





JANTXV2N4857 N-CHANNEL J-FET Datasheet

Part Number JANTXV2N4857
Description N-CHANNEL J-FET
Manufacture Microsemi
Total Page 2 Pages
PDF Download Download JANTXV2N4857 Datasheet PDF

Features: TECHNICAL DATA N-CHANNEL J-FET Qualifie d per MIL-PRF-19500/385 Devices 2N4856 2N4857 2N4858 2N4859 2N4860 2N4861 Qua lified Level JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +250C unless oth erwise noted) 2N4856 2N4859 Parameter s / Test Conditions Symbol 2N4857 2N48 60 2N4858 2N4861 Gate-Source Voltage Drain-Source Voltage VGS -40 -30 VDS 40 30 Drain-Gate Voltage Gate Current VDG 40 30 IG 50 Power Dissipation TA = +250C (1) TC = +250C (2) PT 0.36 1.8 Operating Junction & Storage Temp erature Range (1) Derate linearly 2.06 mW/0C for TA > 250C. (2) Derate linearl y 10.3 mW/0C for TC > 250C. Tj, Tstg -65 to +200 Unit V V V mA W W 0C ELEC TRICAL CHARACTERISTICS (TC = 250C unles s otherwise noted) Parameters / Test C onditions Symbol Gate-Source Breakdow n Voltage VDS = 0, IG = 1.0 µAdc 2N48 56, 2N4857, 2N4858 2N4859, 2N4860, 2N48 61 V(BR)GSS Gate-Source “Off” Sta te Voltage VDS = 15 Vdc, ID = 0.5 ηAdc 2N4856, 2N4859 2N4857, 2N4860 2N4858, 2N4861 VGS(on) Gate R.

Keywords: JANTXV2N4857, datasheet, pdf, Microsemi, N-CHANNEL, J-FET, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute, Equivalent

TECHNICAL DATA
N-CHANNEL J-FET
Qualified per MIL-PRF-19500/385
Devices
2N4856 2N4857 2N4858 2N4859 2N4860 2N4861
Qualified Level
JAN
JANTX
JANTXV
ABSOLUTE MAXIMUM RATINGS (TC = +250C unless otherwise noted)
2N4856 2N4859
Parameters / Test Conditions
Symbol 2N4857 2N4860
2N4858 2N4861
Gate-Source Voltage
Drain-Source Voltage
VGS -40 -30
VDS 40
30
Drain-Gate Voltage
Gate Current
VDG 40
30
IG 50
Power Dissipation
TA = +250C (1)
TC = +250C (2)
PT 0.36
1.8
Operating Junction & Storage Temperature Range
(1) Derate linearly 2.06 mW/0C for TA > 250C.
(2) Derate linearly 10.3 mW/0C for TC > 250C.
Tj, Tstg
-65 to +200
Unit
V
V
V
mA
W
W
0C
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Parameters / Test Conditions
Symbol
Gate-Source Breakdown Voltage
VDS = 0, IG = 1.0 µAdc
2N4856, 2N4857, 2N4858
2N4859, 2N4860, 2N4861
V(BR)GSS
Gate-Source “Off” State Voltage
VDS = 15 Vdc, ID = 0.5 ηAdc
2N4856, 2N4859
2N4857, 2N4860
2N4858, 2N4861
VGS(on)
Gate Reverse Current
VDS = 0, VGS = -20 Vdc
VDS = 0, VGS = -15 Vdc
Drain Current
VGS = -10 Vds, VDS = 15 Vdc
2N4856, 2N4857, 2N4858
2N4859, 2N4860, 2N4861
IGSS
ID(off)
Min.
-40
-30
-4.0
-2.0
-0.8
TO-18*
(TO-206AA)
*See appendix A for
package outline
Max. Units
Vdc
-10
-6.0
-4.0
-0.25
-0.25
0.25
Vdc
ηA
ηA
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2

     






Index : 0  1  2  3   4  5  6  7   8  9  A  B   C  D  E  F   G  H  I  J   K  L  M  N   O  P  Q  R   S  T  U  V   W  X  Y  Z
@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)